BC69PAS series
20 V, 2 A PNP medium power transistors
Rev. 1 — 19 June 2015
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small
Surface-Mounted Device (SMD) plastic package with medium power capability and visible
and solderable side pads.
NPN complement: BC68PAS series
1.2 Features and benefits
High collector current capability
Three current gain selections
I
C
and I
CM
Reduced Printed-Circuit Board (PCB)
Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal
Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CEO
I
C
I
CM
h
FE
Parameter
Conditions
Min
-
-
single pulse; t
p
1 ms
V
CE
=
1
V; I
C
=
500
mA
V
CE
=
1
V; I
C
=
500
mA
V
CE
=
1
V; I
C
=
500
mA
[1]
[1]
[1]
Typ
-
-
-
-
-
-
Max Unit
20
2
3
375
250
375
V
A
A
collector-emitter voltage open base
collector current
peak collector current
DC current gain
h
FE
selection -16
h
FE
selection -25
-
85
100
160
[1]
Pulse test: t
p
300 ms;
0.02.
NXP Semiconductors
BC69PAS series
20 V, 2 A PNP medium power transistors
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline
Graphic symbol
3. Ordering information
Table 3.
Ordering information
Package
Name
BC69PAS
BC69-16PAS
BC69-25PAS
Description
Version
SOT1061D
DFN2020D-3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body
2
2
0.65 mm.
Type number
4. Marking
Table 4.
BC69PAS
BC69-16PAS
BC69-25PAS
Marking codes
Marking code
C1
C2
C3
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
single pulse;
t
p
1 ms
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
32
20
5
2
3
0.4
Unit
V
V
V
A
A
A
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
2 of 15
NXP Semiconductors
BC69PAS series
20 V, 2 A PNP medium power transistors
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
25
C
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
55
65
Max
420
830
1.1
810
1.65
150
150
150
Unit
mW
mW
W
mW
W
C
C
C
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
.
(1) FR4 PCB, 4-layer copper, 1 cm
2
(2) FR4 PCB, single-sided copper, 6 cm
2
(3) FR4 PCB, single-sided copper, 1 cm
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 1.
Power derating curves
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
3 of 15
NXP Semiconductors
BC69PAS series
20 V, 2 A PNP medium power transistors
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
in free air
[1]
[2]
[3]
[4]
[5]
Max
298
151
114
154
76
20
Unit
K/W
K/W
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance from junction to solder point
in free air
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
4 of 15
NXP Semiconductors
BC69PAS series
20 V, 2 A PNP medium power transistors
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
006aac684
10
1
0
10
–1
10
–5
10
–4
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
Fig 3.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
006aac685
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
1
0
0.02
0.01
10
–1
10
–5
10
–4
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
5 of 15
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