BZV55 series
Voltage regulator diodes
Rev. 04 — 19 July 2007
Product data sheet
1. Product profile
1.1 General description
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized
E24
±2
% (BZV55-B) and approximately
±5
% (BZV55-C) tolerance range. The series
consists of 37 types with nominal working voltages from 2.4 V to 75 V.
1.2 Features
I
Non-repetitive peak reverse power
dissipation:
≤
40 W
I
Total power dissipation:
≤
500 mW
I
Two tolerance series:
±2
% and
±5
%
I
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
I
Low differential resistance
I
Small hermetically sealed glass SMD
package
1.3 Applications
I
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
[1]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 10 mA
[1]
Min
-
-
Typ
-
-
Max
0.9
40
Unit
V
W
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
k
a
1
2
006aaa152
[1]
The marking band indicates the cathode.
NXP Semiconductors
BZV55 series
Voltage regulator diodes
3. Ordering information
Table 3.
Ordering information
Package
Name
BZV55-B2V4 to
BZV55-C75
[1]
[1]
Type number
Description
hermetically sealed glass surface-mounted
package; 2 connectors
Version
SOD80C
-
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking code
[1]
marking band
Type number
BZV55-B2V4 to BZV55-C75
[1]
blue: made in China
yellow: made in Philippines
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on a ceramic substrate of 10
×
10
×
0.6 mm.
[1]
Conditions
Min
-
-
Max
250
see
Table 8
and
9
40
400
500
+200
+200
Unit
mA
P
ZSM
P
tot
T
stg
T
j
[1]
[2]
[1]
-
-
-
−65
−65
W
mW
mW
°C
°C
T
amb
≤
50
°C
T
tp
≤
50
°C
[2]
[2]
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-t)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
380
300
Unit
K/W
K/W
Device mounted on a ceramic substrate of 10
×
10
×
0.6 mm.
BZV55_SER_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 19 July 2007
2 of 12
NXP Semiconductors
BZV55 series
Voltage regulator diodes
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
≤
0.001
006aab072
1
10
−1
1
10
10
2
10
3
10
4
t
p
(ms)
10
5
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
BZV55-B/C15 to BZV55-B/C75
BZV55_SER_4
Conditions
I
F
= 10 mA
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Z(nom)
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
0.9
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
Unit
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 19 July 2007
3 of 12
NXP Semiconductors
BZV55 series
Voltage regulator diodes
Table 8.
Characteristics per type; BZV55-B2V4 to BZV55-C24
T
j
= 25
°
C unless otherwise specified.
BZV55-x Sel
xx
Working
voltage
V
Z
(V)
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
BZV55_SER_4
Differential resistance
r
dif
(Ω)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
= 1 mA
Typ
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
Max
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
I
Z
= 5 mA
Typ
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
Max
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
I
Z
= 5 mA
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
Typ
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5.0
5.2
5.4
5.71
6.0
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
9.28
9.6
10.2
10.6
11.2
11.6
12.2
12.7
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4.0
4.61
4.4
5.0
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7.0
8.04
7.7
8.92
8.5
9.8
9.4
10.8
10.4
11.8
11.4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 19 July 2007
4 of 12
NXP Semiconductors
BZV55 series
Voltage regulator diodes
Table 8.
Characteristics per type; BZV55-B2V4 to BZV55-C24
…continued
T
j
= 25
°
C unless otherwise specified.
BZV55-x Sel
xx
Working
voltage
V
Z
(V)
I
Z
= 5 mA
Min
13
15
16
18
20
22
24
B
C
B
C
B
C
B
C
B
C
B
C
B
C
[1]
[2]
Differential resistance
r
dif
(Ω)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
= 1 mA
Typ
50
50
50
50
60
60
60
Max
170
200
200
225
225
250
250
I
Z
= 5 mA
Typ
10
10
10
10
15
20
25
Max
30
30
40
45
55
55
70
I
Z
= 5 mA
Min
7.0
9.2
10.4
12.4
12.3
14.1
15.9
Typ
9.4
11.4
12.4
14.4
15.6
17.6
19.6
Max
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Max
80
75
75
70
60
60
55
Max
2.5
2.0
1.5
1.5
1.5
1.25
1.25
Max
13.3
14.1
15.3
15.6
16.3
17.1
18.4
19.1
20.4
21.2
22.4
23.3
24.5
25.6
12.7
12.4
14.7
13.8
15.7
15.3
17.6
16.8
19.6
18.8
21.6
20.8
23.5
22.8
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
BZV55_SER_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 19 July 2007
5 of 12
Embedded System
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