SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V
th
=0.5 1.5V.
High Speed.
Small Package.
Enhancement-Mode.
KTK5132U
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
M
B
M
2
D
3
1
H
N
K
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
)
SYMBOL
V
DS
V
GSS
I
D
P
D
*
T
ch
T
stg
RATING
30
20
100
200
150
-55 150
0.6
)
UNIT
V
V
mA
mW
DIM
A
B
C
D
E
G
H
J
K
L
M
N
MILLIMETERS
_
2.00 + 0.20
_ 0.15
1.25+
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
0.42 + 0.10
0.10 MIN
A
J
C
L
G
1. SOURCE
2. GATE
3. DRAIN
USM
Note) * Package Mounted On 99.5% Alumina 10 8
EQUIVALENT CIRCUIT
D
Marking
G
Type Name
KB
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-on Time
Switching Time
Turn-off Time
SYMBOL
I
GSS
V
(BR)DSS
I
DSS
V
th
|Y
fs
|
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
V
DD
=5V, I
D
=10mA, V
GS
=0 5V
V
GS
=
TEST CONDITION
16V, V
DS
=0V
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
180
MAX.
1
-
1
1.5
-
7
-
-
-
-
-
pF
pF
pF
nS
nS
UNIT
A
V
A
V
mS
I
D
=100 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=3V, I
D
=0.1mA
V
DS
=3V, I
D
=10mA
I
D
=10mA, V
GS
=2.5V
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
2003. 7. 8
Revision No : 0
1/3
KTK5132U
V
DS(ON)
- I
D
2
DRAIN-SOURCE ON VOLTAGE
V
DS(ON)
(V)
1
0.5
0.3
0.1
0.05
0.03
0.01
0.005
1
3
5
10
30
50
100
10
1
3
5
COMMON SOURCE
V
GS
=2.5V
Ta=25 C
t - I
D
1K
SWITCHING TIME t (ns)
500
300
t
on
t
r
100
50
30
50Ω
5V
V
IN
0
10µs
I
D
V
OUT
R
L
t
off
t
f
V
DD
=5V
D.U. < 1%
=
V
IN
:t
r
, t
f
< 5ns
(Z
OUT
=50Ω)
COMMON SOURCE
Ta=25 C
V
DD
10
30
50
100
DRAIN CURRENT I
D
(mA)
DRAIN CURRENT I
D
(mA)
P
D
- Ta
DRAIN POWER DISSIPATION P
D
(mW)
300
1
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
2 Ta=25 C
1
200
100
2
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
5V
0
10µs
V
IN
V
IN
I
D
V
OUT
V
DD
=5V
D.U. < 1%
=
V
IN
:t
r
, t
f
< 5ns
V
IN
5V
10%
90%
0
V
DD
V
OUT
V
DS
(ON)
R
L
50Ω
(Z
OUT
=50Ω)
COMMON SOURCE
V
DD
Ta=25 C
10%
90%
t
r
t
on
t
off
t
f
2003. 7. 8
Revision No : 0
3/3
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