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W2664NC360

Description
DIODE 2664 A, 3600 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size243KB,9 Pages
ManufacturerIXYS
Download Datasheet Parametric Compare View All

W2664NC360 Overview

DIODE 2664 A, 3600 V, SILICON, RECTIFIER DIODE, Rectifier Diode

W2664NC360 Parametric

Parameter NameAttribute value
MakerIXYS
package instructionO-CEDB-N2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current29200 A
Number of components1
Phase1
Number of terminals2
Maximum output current2664 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3600 V
Maximum reverse recovery time40 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
WESTCODE
An
Date:- 11 Feb, 2004
Data Sheet Issue:- 1
IXYS
Company
Rectifier Diode
Types W2664NC300 to W2664NC400
Old Type No.: SW30-40CXC1170
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
3000-4000
3100-4100
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
MAXIMUM
LIMITS
2664
1851
1140
4897
4295
26.5
29.2
3.51×10
4.26×10
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
°C
°C
2
2
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=85°C, (note 2)
Maximum average forward current. T
sink
=85°C, (note 3)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Operating temperature range
Storage temperature range
2
2
-40 to +160
-55 to +160
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 160°C T
j
initial.
Data Sheet. Types W2664NC300 to W2664NC400 Issue 1
Page 1 of 9
February, 2004

W2664NC360 Related Products

W2664NC360 W2664NC380 W2664NC300
Description DIODE 2664 A, 3600 V, SILICON, RECTIFIER DIODE, Rectifier Diode Rectifier Diode, 1 Phase, 1 Element, 2664A, 3800V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 2664A, 3000V V(RRM), Silicon,
Maker IXYS IXYS IXYS
package instruction O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 29200 A 29200 A 29200 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum output current 2664 A 2664 A 2664 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 3600 V 3800 V 3000 V
Maximum reverse recovery time 40 µs 40 µs 40 µs
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location END END END
Base Number Matches 1 1 1
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