RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAT54
SCHOTTKY BARRIER DIODE
FEATURES
* Very low turn-on voltage
* Fast switching
* For protecting the P/N junction guard ringagainst excessive
voltage, such as electrostatic dis-charges
* Surface mounting device
.040 (1.02)
.035 (0.88)
SOT-23
.017 (0.42)
.015 (0.38)
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.110 (2.80)
.079 (2.00)
.118 (3.00)
(C)
(A)
(B)
.071 (1.80)
* Weight : apporx. 0.008g
(C)
(A)
(A).NC
(B).ANODE
(C).CATHODE
.028 (0.70)
.020 (0.50)
.055 (1.40)
.047 (1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.045 (1.15)
.033 (0.85)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge Forward Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
F
I
FRM
I
FSM
P
D
T
J
T
STG
BAT54
30
200
300
600
230
125
-65 to + 150
UNITS
Volts
mA
mA
mA
mW
0
o
.006 (0.14)
.003 (0.08)
.102 (2.60)
.094 (2.40)
R0.05
(.002)
C
C
0
2001-12
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Reverse Breakdown Voltage
SYMBOL
V(BR)R
VF(1)
VF(2)
Forward Voltage
VF(3)
VF(4)
VF(5)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
Trr
Value
30
240
320
400
500
1000
2.0
10
5
Unit
V
mV
mV
mV
mV
mV
uA
pF
nS
Ir=10uA
If=0.1mA
If=1mA
IF=10mA
If=30mA
If=100mA
Vr=25V
Vr=1V,f=1MHZ
If=Ir=10mA,RL=100 ohm, measured at ir=1mA
Testing Condition
CHARACTERISTIC CURVES
FIG. 1 - FORWARD CURRENT
& FORWARD VOLTAGE
250
200
FORWARD CURRENT, iF(mA)
DIODE CAPACITANCE,Cd (pF)
FIG. 2 -
DIODE CAPACITANCE
200
150
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2 4
10 20
REVERSE VOLTAGE, ( V )
40
100
100
50
0
0
200
400
600
800
1000
FORWARD VOLTAGE,VF (mV )
RECTRON