®
ISL7119RH
Data Sheet
October 8, 2008
FN6607.2
Radiation Hardened High Speed Dual
Voltage Comparator
The ISL7119RH is a radiation hardened high speed dual
voltage comparator fabricated on a single monolithic chip. It
is designed to operate over a wide dual supply voltage range
as well as a single 5V logic supply and ground. The open
collector output stage facilitates interfacing with a variety of
logic devices and has the ability to drive relays and lamps at
output currents up to 25mA.
The ISL7119RH is fabricated on our dielectrically isolated
Rad-hard Silicon Gate (RSG) process, which provides
immunity to Single Event Latch-up (SEL) and highly reliable
performance in the natural space environment.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ISL7119RH are
contained in SMD 5962-07215. A “hot-link” is provided
on our website for downloading.
Features
• Electrically Screened to DSCC SMD # 5962-07215
• QML Qualified Per MIL-PRF-38535 Requirements
• Radiation Environment
- Total Dose. . . . . . . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEL/SEB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Immune
• Input Offset Voltage (V
IO
). . . . . . . . . . . . . . . . . 8mV (Max)
• Input Bias Current (I
BIAS
) . . . . . . . . . . . . . .1000nA (Max)
• Input Offset Current (I
IO
) . . . . . . . . . . . . . . . .150nA (Max)
• Saturation Voltage @ I
SINK
= 3.2mA (V
SAT
) . 0.65V (Max)
• Saturation Voltage @ I
SINK
= 25mA (V
SAT
) . . 1.8V (Max)
• Response Time (t
PD
) . . . . . . . . . . . . . . . . . . . 160ns (Max)
Applications
• Window Detector
• Level Shifter
• Relay Driver
Pinouts
s
• Lamp Driver
ISL7119RH
(10 LD FLATPACK GDFP1-F10 OR CDFP2-F10)
TOP VIEW
OUT 1
GND 1
+IN 1
-IN 1
-V
S
1
2
3
4
5
10
9
8
7
6
+V
S
-IN 2
+IN 2
GND 2
OUT 2
Ordering Information
ORDERING
NUMBER
INTERNAL
MKT. NUMBER
PART MARKING
Q 5962F07 21501QXC
Q 5962F07 21501VXC
TEMP. RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
ISL7 119RHF /Proto
-55 to +125
PACKAGE
10 Ld Flatpack
10 Ld Flatpack
10 Ld Flatpack
10 Ld Flatpack
PKG. DWG. #
K10.A
K10.A
K10.A
K10.A
5962F0721501QXC ISL7119RHQF
5962F0721501VXC
5962F0721501V9A
ISL7119RH/Proto
ISL7119RHVF
ISL7119RHVX
ISL7119RHF/Proto
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
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Copyright Intersil Americas Inc. 2007, 2008. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL7119RH
Die Characteristics
DIE DIMENSIONS:
2030µm x 2030µm (~80 mils x 80 mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate, Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
66
Metallization Mask Layout
ISL7119RH
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
2
FN6607.2
October 8, 2008