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ZC806B

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 100pF C(T), 25V, Silicon, Hyperabrupt, DO-7,
CategoryDiscrete semiconductor    diode   
File Size77KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

ZC806B Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 100pF C(T), 25V, Silicon, Hyperabrupt, DO-7,

ZC806B Parametric

Parameter NameAttribute value
MakerAPI Technologies
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other features3% MATCHED SETS ARE AVAILABLE
Minimum breakdown voltage25 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio5
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor75
Maximum repetitive peak reverse voltage25 V
Maximum reverse current2e-8 µA
Reverse test voltage20 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
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