Product Specification
www.jmnic.com
Silicon NPN Power Transistors
BU2527DX
DESCRIPTION
・With
TO-3PML package
・High
voltage
・High
speed switching
・Built-in
damper diode
APPLICATIONS
・For
use in horizontal deflection
circuits of high resolution monitors
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Base current (Pulse)
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
7.5
12
30
8
12
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
EBO
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
V
F
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Diode forward voltage
CONDITIONS
I
C
=100mA ;I
B
=0,L=25mH
I
E
=600mA ;I
C
=0
I
C
=8A ;I
B
=1.6A
I
C
=8A ;I
B
=1.6A
V
CE
=BV
CES;
V
BE
=0
T
C
=125℃
V
EB
=6V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=8A ; V
CE
=5V
I
F
=8A
5
MIN
800
7.5
BU2527DX
TYP.
MAX
UNIT
V
V
5.0
1.1
1.0
2.0
110
11
10
2.0
V
V
mA
mA
V
JMnic
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