SPP77N06S2-12
SPB77N06S2-12
OptiMOS
®
Power-Transistor
Feature
•
N-Channel
Product Summary
V
DS
R
DS(on)
I
D
P- TO263 -3-2
55
12
80
P- TO220 -3-1
V
mΩ
A
•
Enhancement mode
•
175°C operating temperature
•
Avalanche rated
•
dv/dt rated
Type
SPP77N06S2-12
SPB77N06S2-12
Package
P- TO220 -3-1
P- TO263 -3-2
Ordering Code
Q67060-S6029
Q67060-S6030
Marking
2N0612
2N0612
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
C
=25°C
Value
80
56
Unit
A
I
D
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
320
280
16
6
±20
158
-55... +175
55/175/56
kV/µs
V
W
°C
mJ
Avalanche energy, single pulse
I
D=77A,
V
DD
=25V,
R
GS
=25Ω
Repetitive avalanche energy, limited by
T
jmax
1)
Reverse diode dv/dt
I
S=77A,
V
DS
=44V,
di/dt=200A/µs,
T
jmax
=175°C
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPP77N06S2-12
SPB77N06S2-12
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
0.63
-
-
-
max.
0.95
62
62
40
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
-
-
55
2.1
Values
typ.
-
3
max.
-
4
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=93µA
Zero gate voltage drain current
V
DS
=55V,
V
GS
=0V,
T
j
=25°C
V
DS
=55V,
V
GS
=0V,
T
j
=125°C
µA
0.01
1
1
9.8
1
100
100
12
nA
mΩ
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
V
GS
=10V,
I
D
=38A
1Defined by design. Not subject to production test.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-05-09
SPP77N06S2-12
SPB77N06S2-12
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=44V,
I
D
=77A,
V
GS
=0 to 10V
V
DD
=44V,
I
D
=77A
Symbol
Conditions
min.
Values
typ.
54
1770
460
120
14
27
34
26
max.
-
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=56A
V
GS
=0V,
V
DS
=25V,
f=1MHz
27
-
-
-
-
-
-
-
S
2350 pF
610
180
20
40
50
39
ns
V
DD
=30V,
V
GS
=10V,
I
D
=77A,
R
G
=6.2Ω
-
-
-
-
9
18
45
5.9
12
28
60
-
nC
V
(plateau)
V
DD
=44V,
I
D
=77A
V
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=77A
V
R
=30V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
T
C
=25°C
-
-
-
-
-
-
-
1
45
64
80
320
1.3
60
80
A
V
ns
nC
Page 3
2003-05-09
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