.
BDY53 – BDY54
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Ratings
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
@ T
C
= 25°
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
Value
60
120
100
180
7
12
5
Unit
V
V
V
A
A
Watts
°C
°C
60
200
-65 to +200
COMSET SEMICONDUCTORS
1/3
BDY53 – BDY54
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
I
EBO
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
I
C
=100 mA, I
B
=0
Min Typ Mx Unit
60
120
-
-
-
-
-
-
3.0
V
BDY53
BDY54
BDY53
BDY54
Emitter-Base Cutoff Current
V
EB
=7 V
V
CE
=100 V
V
BE
=-1.5 V
T
CASE
=150°C
V
CE
=150 V
V
BE
=-1.5 V
T
CASE
=150°C
I
C
=4.0 A, I
B
=0.4 A
I
C
=7.0 A, I
B
=1.4 A
I
C
=4.0 A, I
B
=0.4 A
mA
I
CEX
Collector-Emitter Cutoff
Current
BDY53
-
-
15
mA
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
-
-
-
-
-
20
-
-
-
-
-
-
1.1
V
2.2
2
V
2.5
60
V
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
V
BE(SAT)
Base-Emitter Voltage (*)
I
C
=7.0 A, I
B
=1.4 A
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=1.5 V, I
C
=2 A
f
T
Transition Frequency
V
CE
=4.0 V, I
C
=0.5 A, f=10
MHz
20
-
-
MHz
t
d
+ t
r
Turn-on time
I
C
=5 A, I
B
=1 A
-
0.3
-
µs
t
s
+ t
f
Turn-off time
I
C
=5 A,
I
B1
=1 A,
I
B2
=-0.5 A
-
1.8
-
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
COMSET SEMICONDUCTORS
2/3
BDY53 – BDY54
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
mm inches
25,45
1
38,8
1,52
30,09 1,184
17,11
0,67
9,78
0,38
11,09
0,43
8,33
0,32
1,62
0,06
19,43
0,76
1
0,04
4,08
0,16
Pin 1 :
Pin 2 :
Case :
Base
Collector
Emitter
COMSET SEMICONDUCTORS
3/3