APT30GP60B2DL(G)
APT30GP60LDL(G)
600V, 30A, V
CE(ON)
= 2.2V Typical
Resonant Mode Combi IGBT
®
The POWER MOS 7
®
IGBT used in this resonant mode combi is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high
frequency, high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Features
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• Low forward Diode Voltage (V
F
)
• Ultrasoft Recovery Diode
• SSOA Rated
• RoHS Compliant
Typical Applications
• Induction Heating
• Welding
• Medical
• High Power Telecom
• Resonant Mode Phase Shifted
Bridge
G
C
E
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
Ratings
UNIT
600
±20
±30
100
49
120
120A @ 600V
463
-55 to 150
300
Watts
°C
Amps
Volts
@ T
C
= 25°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.2
2.1
275
2
6
2.7
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 30A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 30A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
052-6355
Rev B
Gate-Emitter Leakage Current (V
GE
= ±20V)
±100
nA
6-2009
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2750
μA
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
APT30GP60B2DL_LDL(G)
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 30A
T
J
= 150°C, R
G
= 5Ω, V
GE
=
15V, L = 100μH,V
CE
= 600V
Inductive Switching (25°C)
V
CC
(Peak) = 400V
V
GE
= 15V
I
C
= 30A
4
MIN
TYP
MAX
UNIT
pF
V
nC
3200
295
20
7.5
90
20
30
120
13
18
55
46
260
335
250
330
13
18
84
80
260
508
518
750
μ
J
ns
ns
A
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching SOA
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
4
5
R
G
= 5Ω
T
J
= +25°C
Turn-on Switching Energy (Diode)
5
6
μ
J
Inductive Switching (125°C)
V
CC
(Peak) = 400V
V
GE
= 15V
I
C
= 30A
R
G
= 5Ω
T
J
= +125°C
Turn-on Switching Energy (Diode)
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JC
W
T
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN
TYP
MAX
UNIT
°C/W
gm
.27
.88
5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
6-2009
052-6355
Rev B
TYPICAL PREFORMANCE CURVES
60
50
40
30
20
T
C
=25°C
10
0
T
C
=125°C
V
GE
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
60
50
40
30
20
10
0
APT30GP60B2DL_LDL(G)
V
GE
= 10V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
T
C
=-55°C
T
C
=-55°C
T
C
=25°C
T
C
=125°C
0
0.5
1
1.5
2
2.5
3
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
0
0.5
1
1.5
2
2.5
3
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
200
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
180
I
C
, COLLECTOR CURRENT (A)
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
J
= 25°C
T
J
= 125°C
250μs PULSE TEST
<0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (V
GE
= 10V)
16
14
12
10
8
6
4
2
0
0
10
20 30 40 50 60 70 80 90 100
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
CE
=480V
I = 30A
C
T = 25°C
J
T
J
= -55°C
V
CE
=120V
V
CE
=300V
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
3.5
3
2.5
2
1.5
1
0.5
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
3.5
3
2.5
2
1.5
1
0.5
V
GE
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C=
60A
I
C=
30A
I
C=
15A
I
C=
60A
I
C=
30A
I
C=
15A
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
0
6
-25
0
25
50
75
100 125
T
J
, JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
140
0
-50
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
1.10
1.05
1.0
0.95
0.90
0.85
0.8
-50
I
C,
DC COLLECTOR CURRENT(A)
1.15
120
100
80
60
40
20
0
-50
6-2009
052-6355
Rev B
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
APT30GP60B2DL_LDL(G)
25
V
GE
= 10V
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
100
90
80
70
60
50
40
30
20
10
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
T
J
=
25 or 125°C,V
GE
=
10V
R
G
=
5Ω, L
=
100
μ
H, V
CE
=
400V
V
GE
=10V,T
J
=25°C
V
GE
=10V,T
J
=125°C
V
GE
=15V,T
J
=125°C
20
V
CE
= 400V
R
G
= 5Ω
L = 100
μH
15
V
GE
= 15V
10
V
GE
=15V,T
J
=25°C
V
CE
= 400V
T
J
= 25°C, T
J
=125°C
R
G
= 5Ω
L = 100
μH
0
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
5
50
0
40
t
r,
RISE TIME (ns)
t
f,
FALL TIME (ns)
80
T
J
=
125°C, V
GE
=
10V or 15V
30
60
20
40
T
J
=
25°C, V
GE
=
10V or 15V
10
T
J
=
25 or 125°C,V
GE
=
15V
R
G
=
5Ω, L
=
100
μ
H, V
CE
=
400V
20
10
20
30
40
50
60
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
1000
T
J
=
125°C,V
GE
=
10V
V
= 400V
CE
V
= +15V
GE
R =5
Ω
G
0
0
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
V
= 400V
CE
V
= +15V
GE
R =5
Ω
G
0
E
OFF
, TURN OFF ENERGY LOSS (μJ)
E
ON2
, TURN ON ENERGY LOSS (μJ)
T
J
=
125°C,V
GE
=
15V
T
J
=
125°C, V
GE
=
10V or 15V
T
J
=
25°C, V
GE
=
10V or 15V
800
600
400
200
0
T
J
=
25°C,V
GE
=
15V
T
J
=
25°C,V
GE
=
10V
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2500
SWITCHING ENERGY LOSSES (μJ)
SWITCHING ENERGY LOSSES (μJ)
V
= 400V
CE
V
= +15V
GE
T = 125
°
C
J
0
10
20
30
40
50
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
= 400V
V
CE
V
= +15V
GE
R =5
Ω
G
2000
1500
E
on2,
60A
E
off,
60A
E
on2,
60A
E
off,
60A
1000
E
on2,
30A
E
off,
30A
E
on2,
15A
6-2009
500
E
on2,
30A
E
off,
30A
E
on2,
15A
Rev B
052-6355
E
off,
15A
0
0
10
20
30
40
50
60
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
off,
15A
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PREFORMANCE CURVES
10,000
5,000
1,000
500
C
oes
C
ies
140
120
I
C
, COLLECTOR CURRENT (A)
100
80
60
40
20
0
APT30GP60B2DL_LDL(G)
C, CAPACITANCE ( F)
P
100
50
C
res
10
5
0
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.30
0.25
0.20
0.9
100 200 300 400 500 600 700
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0
Z
θJC
, THERMAL IMPEDANCE (°C/W)
0.7
0.15
0.5
Note:
0.3
PDM
0.10
t1
t2
0.05
0
10
-5
0.1
0.05
10
-4
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
300
F
MAX
, OPERATING FREQUENCY (kHz)
100
F
max
=
min(f
max1
, f
max 2
)
50
f
max1
=
f
max 2
=
P
diss
=
0.05
t
d(on )
+
t
r
+
t
d(off )
+
t
f
P
diss
−
P
cond
E
on 2
+
E
off
20
30
40
50
60
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
V
= 400V
CE
R =5
Ω
G
T
J
−
T
C
R
θ
JC
0
10
052-6355
Rev B
6-2009
MicroPython Open Source section
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