is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2
is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6336 Rev C 6 - 2009
Typical Performance Curves
60
50
40
30
20
10
0
V
GE
APT36GA60BD_S15
280
240
200
12V
160
11V
120
80
40
0
10V
9V
8V
6V
0
4
8
12 16 20
24 28 32
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 25°C)
I = 20A
C
T = 25°C
J
= 15V
15V
13V
I
C
, COLLECTOR CURRENT (A)
T
J
= 55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
0
1
2
3
4
5
6
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T
J
= 25°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250μs PULSE
TEST<0.5 % DUTY
CYCLE
I
C
, COLLECTOR CURRENT (A)
300
250
200
150
100
50
0
16
14
12
10
8
6
4
2
0
I
C
, COLLECTOR CURRENT (A)
V
CE
= 120V
V
CE
= 300V
V
CE
= 480V
T
J
= 25°C
T
J
= 125°C
0
2
4
6
8
T
J
= -55°C
10
12
14
0 10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
20 30 40 50 60 70 80
GATE CHARGE (nC)
FIGURE 4, Gate charge
90 100
5
3
4
I
C
= 40A
I
C
= 20A
3
I
C
= 40A
I
C
= 20A
I
C
= 10A
V
GE
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
2
I
C
= 10A
1
2
1
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
0
6
50
75
100
125
150
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
70
0
0
25
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
I
C
, DC COLLECTOR CURRENT (A)
60
50
40
052-6336 Rev C 6- 2009
30
20
10
75
100
125
150
T
C
, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
25
50
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
Typical Performance Curves
20
t
d(OFF)
, TURN-OFF DELAY TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
200
APT36GA60BD_S15
18
160
V
GE
=15V,T
J
=125°C
16
V
GE
= 15V
120
V
GE
=15V,T
J
=25°C
14
80
12
10
V
CE
= 400V
T
J
= 25°C
,
or 125°C
R
G
= 10Ω
L = 100μH
40
V
CE
=
400V
R
G
=
10Ω
L = 100μH
0
5
10 15 20
25 30 35
40
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
R
G
=
10Ω, L
=
100
μ
H, V
CE
=
400V
0
5
10
15 20 25 30
35 40
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
150
125
100
75
50
25
0
T
J
=
25°C, V
GE
=
15V
T
J
=
125°C, V
GE
=
15V
R
G
=
10Ω, L
=
100
μ
H, V
CE
=
400V
0
40
35
30
t
r
, RISE TIME (ns)
20
15
10
5
0
0
CE
, COLLECTOR-TO-EMITTER
30 35 40
5 10 15 20 25
CURRENT (A)
I
FIGURE 11, Current Rise Time vs Collector Current
T
J
=
25 or 125°C,V
GE
=
15V
1500
E
on2
,
TURN ON ENERGY LOSS (μJ)
1250
1000
750
500
250
0
t
r
, FALL TIME (ns)
25
E
OFF
,
TURN OFF ENERGY LOSS (μJ)
V
= 400V
CE
V
= +15V
GE
R =10Ω
G
0
5
10
15
20 25 30
35 40
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1200
1000
800
600
400
200
0
V
= 400V
CE
V
= +15V
GE
R = 10Ω
G
T
J
=
125°C
T
J
=
125°C
T
J
=
25°C
T
J
=
25°C
5
10 15 20 25
30 35 40
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2000
SWITCHING ENERGY LOSSES (μJ)
1800
1600
1400
1200
1000
800
600
400
200
0
0
E
off,
20A
E
on2,
10A
E
off,
10A
E
on2,
20A
E
off,
40A
V
= 400V
CE
V
= +15V
GE
T = 125°C
J
0
0
5
10 15
20 25 30
35 40
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
1600
SWITCHING ENERGY LOSSES (μJ)
1400
1200
1000
800
600
400
200
0
0
E
off,
40A
V
= 400V
CE
V
= +15V
GE
R = 10Ω
G
E
on2,
40A
E
on2,
40A
052-6336 Rev C 6 - 2009
E
on2,
20A
E
off,
20A
E
on2,
10A
E
off,
10A
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
10000
C
ies
I
C
, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
200
100
APT36GA60B_SD15
1000
10
100
C
oes
1
C
res
0
100
200
300
400
500
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
1
10
100
800
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.50
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
-5
0.1
0.05
10
-4
D = 0.9
0.7
0.5
0.3
Note:
PDM
t1
t2
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
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