TYPICAL PERFORMANCE CURVES
APT50GT60BRDL(G)
600V
APT50GT60BRDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode Combi IGBT
®
The Thunderbolt IGBT
®
used in this Resonant Mode Combi is a new generation of high
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT
®
of-
fers superior ruggedness and ultrafast switching speed.
Features
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• Low forward Diode Voltage (V
F
)
• Ultrasoft Recovery Diode
• SSOA Rated
• RoHS Compliant
Typical Applications
• Induction Heating
• Welding
• Medical
• High Power Telecom
• Resonant Mode Phase Shifted
Bridge
G
E
G
TO
-24
7
C
E
C
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
7
All Ratings: T
C
= 25°C unless otherwise specified.
APT50GT60BRDL(G)
UNIT
Volts
600
±30
@ T
C
= 25°C
110
52
150
150A @ 600V
446
-55 to 150
300
Watts
°C
Amps
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 2mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
Units
600
3
1.7
4
2.0
2.2
50
2
5
2.5
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
I
CES
I
GES
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
µA
nA
Rev B 11-2008
052-6359
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
1250
120
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
APT50GT60BRDL(G)
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 50A
T
J
= 150°C, R
G
= 5Ω, V
GE
=
15V, L = 100µH,V
CE
= 600V
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 50A
4
5
MIN
TYP
MAX
UNIT
2500
250
155
7.5
240
20
110
150
14
32
240
36
995
1110
1070
14
32
270
95
1035
1655
1505
µ
J
ns
ns
A
nC
V
pF
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
R
G
= 5Ω
T
J
= +25°C
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
44
6
µ
J
Inductive Switching (125°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 50A
R
G
= 5Ω
55
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
6
T
J
= +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JC
W
T
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
MIN
TYP
MAX
UNIT
°C/W
gm
.28
.61
5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
052-6359 Rev B
11-2008
TYPICAL PERFORMANCE CURVES
160
V
GE
APT50GT60BRDL(G)
200
15V 13V
11V
10V
180
I
C
, COLLECTOR CURRENT (A)
160
140
120
100
80
60
40
20
0
8V
7V
6V
0
5
10
15
20
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
9V
= 15V
140
I
C
, COLLECTOR CURRENT (A)
120
T
J
= 25°C
100
T
J
= -55°C
80
T
J
= 125°C
60
40
10
0
0
1
2
3
4
5
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
FIGURE 1, Output Characteristics(T
J
= 25°C)
160
140
I
C
, COLLECTOR CURRENT (A)
120
100
80
60
40
20
0
0
2
4
6
8
10
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (T
J
= 125°C)
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
14
12
10
8
6
4
2
0
0
50
100
150
200
GATE CHARGE (nC)
250
V
CE
= 480V
I = 50A
C
T = 25°C
J
T
J
= -55°C
V
CE
= 120V
V
CE
= 300V
T
J
= 25°C
T
J
= 125°C
FIGURE 4, Gate Charge
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5
3.0
2.5
I
C
= 50A
2.0
1.5
1.0
0.5
0
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I
C
= 100A
4
I
C
= 100A
3
I
C
= 50A
2
I
C
= 25A
I
C
= 25A
1
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
0
6
25
50
75
100
125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
160
0
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
I
C,
DC COLLECTOR CURRENT(A)
1.10
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
140
120
100
80
60
40
20
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
-50
Lead Temperature
Limited
052-6359
Rev B 11-2008
APT50GT60BRDL(G)
25
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
350
20
V
GE
= 15V
300
250
15
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
200
10
150
50
V
CE
=
400V
R
G
=
5Ω
0
20
40
60
80
100
125
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
180
160
140
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
400V
5
V
CE
= 400V
T
J
= 25°C
,
or 125°C
0
R
G
= 5Ω
L = 100µH
0
20
40
60
80
100
120
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
90
80
70
t
r,
RISE TIME (ns)
t
f,
FALL TIME (ns)
60
50
40
30
20
10
20
40
60
80
100
120
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
5000
E
ON2
, TURN ON ENERGY LOSS (µJ)
V
= 400V
CE
V
= +15V
GE
R = 5Ω
G
0
L = 100µH
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
400V
120
100
80
60
40
20
T
J
=
25°C, V
GE
=
15V
T
J
=
125°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
0
0
0
20
40
60
80
100
120
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
E
OFF
, TURN OFF ENERGY LOSS (µJ)
3000
2500
2000
1500
1000
500
0
T
J
=
25°C
V
= 400V
CE
V
= +15V
GE
R = 5Ω
G
0
4000
T
J
=
125°C
T
J
=
125°C
3000
2000
1000
T
J
=
25°C
0
20
40
60
80
100
120
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
10,000
SWITCHING ENERGY LOSSES (µJ)
V
= 400V
CE
V
= +15V
GE
T = 125°C
J
0
0
20
40
60
80
100
120
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
5,000
SWITCHING ENERGY LOSSES (µJ)
V
= 400V
CE
V
= +15V
GE
R = 5Ω
G
E
on2,
100A
E
on2,
100A
8,000
4,000
E
off,
100A
6,000
3,000
4,000
E
off,
100A
11-2008
E
off,
50A
E
on2,
50A
2,000
E
on2,
50A
E
off,
50A
E
on2,
25A
2,000
E
off,
25A
E
on2,
25A
1,000
E
off,
25A
052-6359 Rev B
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
4,000
C
ies
I
C
, COLLECTOR CURRENT (A)
160
140
120
100
80
60
40
20
APT50GT60BRDL(G)
C, CAPACITANCE ( F)
P
1,000
500
C
oes
C
res
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
100
100 200 300 400 500 600 700
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
0
0.30
D = 0.9
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.25
0.20
0.7
0.15
0.5
Note:
0.10
PDM
0.3
SINGLE PULSE
t1
t2
0.05
0.1
0.05
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
0
10
-5
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-4
1.0
120
F
MAX
, OPERATING FREQUENCY (kHz)
50
RC MODEL
Junction
temp. (°C)
0.114
Power
(watts)
0.113
Case temperature. (°C)
0.0276
0.0057
10
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
= 400V
V
CE
R = 5Ω
G
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
f
max2
=
P
diss
=
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
2
10 20
052-6359
Rev B 11-2008
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