is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2
is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6328 Rev E 6 - 2011
Typical Performance Curves
100
V
GE
APT54GA60B_S
350
T
J
= 25°C
300
I
C
, COLLECTOR CURRENT (A)
250
200
8V
150
100
50
0
7V
6V
5V
15V
13V
= 15V
I
C
, COLLECTOR CURRENT (A)
T
J
= 55°C
75
10V
9V
T
J
= 125°C
T
J
= 150°C
50
25
0
0
2
4
6
8
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T
J
= 25°C)
200
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250μs PULSE
TEST<0.5 % DUTY
CYCLE
0 4
8
12
16 20 24
28 32
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 25°C)
I = 32A
C
T = 25°C
J
16
14
12
V
CE
= 300V
10
8
6
4
2
0
0
20
40
60 80 100 120 140
GATE CHARGE (nC)
FIGURE 4, Gate charge
160
V
CE
= 480V
I
C
, COLLECTOR CURRENT (A)
V
CE
= 120V
150
100
50
T
J
= 25°C
T
J
= 125°C
T
J
= -55°C
6
8
10
12
14
0
0
2
4
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
4
3
I
C
= 64A
I
C
= 32A
3
I
C
= 64A
I
C
= 32A
2
I
C
= 16A
1
2
I
C
= 16A
1
V
GE
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
0
6
0
50
75
100
125
150
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
0
25
160
140
I
C
, DC COLLECTOR CURRENT (A)
120
100
80
052-6328 Rev E 6 - 2011
60
40
20
0
-50 -25
75
100
125
150
T
C
, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
25
50
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
Typical Performance Curves
21
t
d(ON)
, TURN-ON DELAY TIME (ns)
20
19
V
GE
= 15V
18
17
16
15
14
200
t
d(OFF)
, TURN-OFF DELAY TIME (ns)
V
CE
= 400V
T
J
= 25°C
,
or 125°C
R
G
= 4.7Ω
L = 100μH
APT54GA60B_S
160
V
GE
=15V,T
J
=125°C
120
80
V
GE
=15V,T
J
=25°C
40
V
CE
=
400V
R
G
=
4.7Ω
L = 100μH
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
70
R
G
=
4.7Ω, L
=
100
μ
H, V
CE
=
400V
60
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
0
160
50
t
r
, RISE TIME (ns)
t
r
, FALL TIME (ns)
40
30
20
10
0
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
125°C, V
GE
=
15V
120
80
T
J
=
25°C, V
GE
=
15V
40
R
G
=
4.7Ω, L
=
100
μ
H, V
CE
=
400V
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
2400
E
on2
,
TURN ON ENERGY LOSS (μJ)
E
OFF
,
TURN OFF ENERGY LOSS (μJ)
V
= 400V
CE
V
= +15V
GE
R =4.7Ω
G
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2400
V
= 400V
CE
V
= +15V
GE
R = 4.7Ω
G
0
2000
2000
1600
T
J
=
125°C
1600
T
J
=
125°C
1200
1200
800
T
J
=
25°C
800
T
J
=
25°C
400
400
10
20
30
40
50
60 70
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
6000
SWITCHING ENERGY LOSSES (μJ)
V
= 400V
CE
V
= +15V
GE
T = 125°C
J
0
0
0
10
20
30
40
50
60
70
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
2400
V
= 400V
CE
V
= +15V
GE
R = 10Ω
G
0
E
on2,
64A
5000
SWITCHING ENERGY LOSSES (μJ)
E
on2,
64A
2000
E
off,
64A
4000
E
off,
64A
1600
3000
1200
E
on2,
32A
052-6328 Rev E 6 - 2011
2000
E
off,
32A
E
on2,
32A
E
on2,
16A
E
off,
16A
800
E
off,
32A
E
on2,
16A
E
off,
16A
1000
400
0
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10000
C
ies
I
C
, COLLECTOR CURRENT (A)
100
C, CAPACITANCE (pF)
500
APT54GA60B_S
1000
10
C
oes
100
1
C
res
10
0
100
200
300
400
500
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1
10
100
1000
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.35
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.30
0.25
0.7
0.20
0.5
0.15
0.10
0.05
0
10
-5
0.3
0.1
0.05
10
-4
D = 0.9
Note:
P
DM
t1
t2
SINGLE PULSE
10
-3
10
-2
Duty Factor D =
1
/
t2
Peak T
J
= P
DM
x Z
θJC + T C
t
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
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