is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2
is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6325 Rev C
6 - 2009
Typical Performance Curves
100
V
GE
APT64GA90B_S
300
250
10V
200
150
100
50
0
9V
8V
7V
6V
15V
13V
11V
= 15V
T
J
= 55°C
T
J
= 125°C
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
80
T
J
= 25°C
60
T
J
= 150°C
40
20
0
0
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T
J
= 25°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250μs PULSE
TEST<0.5 % DUTY
CYCLE
160
140
I
C
, COLLECTOR CURRENT (A)
120
100
80
60
40
20
0
0
16
14
12
10
8
6
4
2
0
0
4
8
12
16 20 24 28
32
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 25°C)
I = 38A
C
T = 25°C
J
V
CE
= 180V
V
CE
= 450V
V
CE
= 720V
T
J
= -55°C
T
J
= 125°C
T
J
= 25°C
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
2
4
6
8
10
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
0
20
40 60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate charge
5
3
I
C
= 76A
I
C
= 38A
4
3
I
C
= 76A
I
C
= 38A
2
I
C
= 13A
1
2
I
C
= 19A
1
V
GE
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
6
8
10
12
14
16
0
0
25
50
75
100
125
150
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
160
140
I
C
, DC COLLECTOR CURRENT (A)
120
100
80
60
40
20
0
6 - 2009
25
50
052-6325 Rev C
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
75
100
125
150
T
C
, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
24
t
d(ON)
, TURN-ON DELAY TIME (ns)
22
20
18
16
14
12
10
200
t
d(OFF)
, TURN-OFF DELAY TIME (ns)
V
CE
= 600V
T
J
= 25°C
,
or 125°C
R
G
= 4.7Ω
L = 100μH
APT64GA90B_S
160
V
GE
=15V,T
J
=125°C
120
V
GE
=15V,T
J
=25°C
80
40
V
CE
=
600V
R
G
=
4.7Ω
L = 100μH
0 10
20
30 40 50 60
70 80
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
80
R
G
=
4.7Ω, L
=
100
μ
H, V
CE
=
600V
70
60
0
10 20
30 40 50
60 70 80
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
0
200
t
r
, RISE TIME (ns)
t
r
, FALL TIME (ns)
50
40
30
20
10
0
0
10
20
T
J
=
25 or 125°C,V
GE
=
15V
150
T
J
=
125°C, V
GE
=
15V
100
T
J
=
25°C, V
GE
=
15V
50
30
40
50
60
70
80
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
6000
E
OFF
,
TURN OFF ENERGY LOSS (μJ)
E
on2
,
TURN ON ENERGY LOSS (μJ)
5000
4000
3000
2000
1000
0
T
J
=
25°C
T
J
=
125°C
V
= 600V
CE
V
= +15V
GE
R =4.7Ω
G
0
10 20
30 40 50
60 70 80
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
70
80
T
J
=
25°C
T
J
=
125°C
V
= 600V
CE
V
= +15V
GE
R = 4.7Ω
G
0
R
G
=
4.7Ω, L
=
100
μ
H, V
CE
=
600V
0
10 20
30
40
50 60 70 80
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
SWITCHING ENERGY LOSSES (μJ)
7000
6000
5000
4000
3000
2000
1000
0
0
E
on2,
38A
E
off,
38A
E
on2,
19A
E
off,
19A
E
on2,
76A
E
off,
76A
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
6000
SWITCHING ENERGY LOSSES (μJ)
V
= 600V
CE
V
= +15V
GE
R = 4.7Ω
G
V
= 600V
CE
= +15V
V
GE
T = 125°C
J
5000
4000
3000
E
on2,
76A
E
off,
76A
6 - 2009
E
on2,
38A
2000
E
off,
38A
052-6325 Rev C
1000
0
E
on2,
19A
E
off,
19A
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10,000
C
ies
I
C
, COLLECTOR CURRENT (A)
100
C, CAPACITANCE (pF)
1000
APT64GA90B_S
1,000
10
100
C
oes
1
C
res
0
100 200 300 400 500 600 700
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
1
10
100
1000
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.30
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.25
0.10
0.15
0.10
0.05
0
D = 0.9
0.7
0.5
Note:
PDM
0.3
t1
t2
0.1
0.05
10
-5
10
-4
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
0.1
1
10
-2
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
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