BUW12AF datasheet, PDF - EEWORLD Datasheet

BUW12AF: DescriptionTRANSISTOR 8 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size277KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUW12AF Overview

TRANSISTOR 8 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Power

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Other features	FORMED LEAD OPTIONS ARE AVAILABLE
Shell connection	ISOLATED
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	450 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	34 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	4800 ns
Maximum opening time (tons)	1000 ns
VCEsat-Max	1.5 V
Base Number Matches	1

	BUW12AF	BUW12F
Description	TRANSISTOR 8 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Power	TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Power
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
Other features	FORMED LEAD OPTIONS ARE AVAILABLE	FORMED LEAD OPTIONS ARE AVAILABLE
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	8 A	8 A
Collector-emitter maximum voltage	450 V	400 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power consumption environment	34 W	34 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	4800 ns	4800 ns
Maximum opening time (tons)	1000 ns	1000 ns
VCEsat-Max	1.5 V	1.5 V

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