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BDX53BBC

Description
TRANSISTOR 8 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size143KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BDX53BBC Overview

TRANSISTOR 8 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

BDX53BBC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Base Number Matches1
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
http://onsemi.com
High DC Current Gain
h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
Collector Emitter Sustaining Voltage
@ 100 mAdc
V
CEO(sus)
= 80 Vdc (Min)
BDX53B, 54B
V
CEO(sus)
= 100 Vdc (Min)
BDX53C, 54C
Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc
V
CE(sat)
= 4.0 Vdc (Max) @ I
C
= 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
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MAXIMUM RATINGS
Rating
Symbol
V
CEO
Value
80
100
80
100
5.0
8.0
12
0.2
Unit
Vdc
Collector−Emitter Voltage
BDX53B, BDX54B
BDX53C, BDX54C
Collector−Base Voltage
BDX53B, BDX54B
BDX53C, BDX54C
Emitter−Base Voltage
Collector Current
Base Current
Continuous
Peak
V
CB
Vdc
V
EB
I
C
I
B
Vdc
Adc
Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
P
D
65
0.48
W
W/°C
°C
T
J
, T
stg
−65
to +150
1
TO−220AB
CASE 221A
STYLE 1
2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
1
Base
BDX5xy =
3
Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJA
R
qJC
Max
70
Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
°C/W
°C/W
2
Collector
1.92
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
=
=
=
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 14
1
Publication Order Number:
BDX53B/D
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