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BT258X-600R

Description
8 A, 500 V, SCR
CategoryAnalog mixed-signal IC    Trigger device   
File Size40KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BT258X-600R Overview

8 A, 500 V, SCR

BT258X-600R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Nominal circuit commutation break time100 µs
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current6 mA
JESD-609 codee3
Maximum leakage current0.5 mA
On-state non-repetitive peak current75 A
Maximum on-state voltage1.5 V
Maximum on-state current5000 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Trigger device typeSCR
Philips Semiconductors
Product specification
Thyristors
logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a full pack, plastic envelope,
intended for use in general purpose
switching
and
phase
control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
BT258X series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT258X-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500R
500
5
8
75
600R
600
5
8
75
800R
800
5
8
75
V
A
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
cathode
anode
gate
PIN CONFIGURATION
case
SYMBOL
a
k
case isolated
1 2 3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
hs
90 ˚C
all conduction angles
half sine wave; T
j
= 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 10 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/µs
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
500
1
600
1
800
5
8
75
82
28
50
2
5
5
0.5
150
125
2
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2
Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002
1
Rev 2.000

BT258X-600R Related Products

BT258X-600R BT258X BT258X-500R BT258X-800R
Description 8 A, 500 V, SCR 8 A, 500 V, SCR 8 A, 500 V, SCR 8 A, 500 V, SCR
Off-state repetitive peak voltage 600 V 500 V 500 V 800 V
Is it Rohs certified? conform to - conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow unknow
Nominal circuit commutation break time 100 µs - 100 µs 100 µs
Critical rise rate of minimum off-state voltage 50 V/us - 50 V/us 50 V/us
Maximum DC gate trigger current 0.2 mA - 0.2 mA 0.2 mA
Maximum DC gate trigger voltage 1.5 V - 1.5 V 1.5 V
Maximum holding current 6 mA - 6 mA 6 mA
JESD-609 code e3 - e3 e3
Maximum leakage current 0.5 mA - 0.5 mA 0.5 mA
On-state non-repetitive peak current 75 A - 75 A 75 A
Maximum on-state voltage 1.5 V - 1.5 V 1.5 V
Maximum on-state current 5000 A - 5000 A 5000 A
Maximum operating temperature 125 °C - 125 °C 125 °C
surface mount NO - NO NO
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
Trigger device type SCR - SCR SCR
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