TRANSISTOR,BJT,NPN,45V V(BR)CEO,3A I(C),TO-202
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | not_compliant |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 3 A |
| Collector-emitter maximum voltage | 45 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 10 |
| JEDEC-95 code | TO-202AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 12 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 50 MHz |
| Base Number Matches | 1 |
| D42C4 | D42C3 | D42C5 | D42C7 | |
|---|---|---|---|---|
| Description | TRANSISTOR,BJT,NPN,45V V(BR)CEO,3A I(C),TO-202 | TRANSISTOR,BJT,NPN,30V V(BR)CEO,3A I(C),TO-202 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,3A I(C),TO-202 | TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-202 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 3 A | 3 A | 3 A | 3 A |
| Collector-emitter maximum voltage | 45 V | 30 V | 45 V | 60 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 10 | 20 | 20 | 10 |
| JEDEC-95 code | TO-202AB | TO-202AB | TO-202AB | TO-202AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 12 W | 12 W | 12 W | 12 W |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 50 MHz | 50 MHz | 50 MHz | 50 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
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