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LN66AS

Description
Infrared LED, 5mm, 1-Element, 950nm, PLASTIC, LT5RR102-001, 2 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size361KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

LN66AS Overview

Infrared LED, 5mm, 1-Element, 950nm, PLASTIC, LT5RR102-001, 2 PIN

LN66AS Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionPLASTIC, LT5RR102-001, 2 PIN
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current0.1 A
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesINFRARED LED
Nominal output power12 mW
peak wavelength950 nm
shapeROUND
size5 mm
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Infrared Light Emitting Diodes
LNA2903L
(LN66A)
GaAs Infrared Light Emitting Diode
For remote control systems
Features
High-power output, high-efficiency: I
e
= 9 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
Wide directivity:
θ
= 20° (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
Forward current
Pulse forward current
*
Reverse voltage
Operating ambient temperature
Storage temperature
Note) *: f = 100 Hz, Duty cycle = 0.1%
Symbol
P
D
I
F
I
FP
V
R
T
opr
T
stg
Rating
160
100
1.5
3
–25 to +85
–40 to +100
Unit
mW
mA
A
V
°C
°C
Electrical-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Radiant power
Reverse current
Forward voltage
Pulse forward voltage
*1
Center radiant intensity
*2
Terminal capacitance
Peak emission wavelength
Spectral half band width
Half-power angle
2. Cutoff frequency: 1 MHz
f
C
: 10
×
log
P
O
at f = f
C
P
O
at f = 50 kHz
=
−3
Symbol
P
O
I
R
V
F
V
FP
I
e
C
t
λ
P
Δλ
θ
I
F
= 50 mA
V
R
= 3 V
I
F
= 100 mA
I
FP
= 1.0 A
I
F
= 50 mA
Conditions
Min
Typ
12.0
Max
10
Unit
mW
µA
V
V
mW/sr
pF
nm
nm
°
1.4
9.0
35
950
50
20
1.6
3.0
V
R
= 0 V, f = 1 MHz
I
F
= 50 mA
I
F
= 50 mA
The angle when the radiant power is halved.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
3. *1: f = 100 Hz, Duty cycle = 0.1%
*2: Rank classification
Rank
I
e
(mW/sr)
No-rank
9.0
S
11.0
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2008
SHC00032CED
1

LN66AS Related Products

LN66AS LNA2903LS
Description Infrared LED, 5mm, 1-Element, 950nm, PLASTIC, LT5RR102-001, 2 PIN Infrared LED, 5mm, 1-Element, 950nm, PLASTIC, LT5RR102-001, 2 PIN
package instruction PLASTIC, LT5RR102-001, 2 PIN PLASTIC, LT5RR102-001, 2 PIN
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Maximum forward current 0.1 A 0.1 A
Number of functions 1 1
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C
Optoelectronic device types INFRARED LED INFRARED LED
Nominal output power 12 mW 12 mW
peak wavelength 950 nm 950 nm
shape ROUND ROUND
size 5 mm 5 mm
Base Number Matches 1 1
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