Standard SRAM, 256KX4, 25ns, CMOS, PDIP32, 0.400 INCH, PLASTIC, DIP-32
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | DIP |
| package instruction | DIP, DIP32,.4 |
| Contacts | 32 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 25 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-PDIP-T32 |
| JESD-609 code | e0 |
| length | 42.105 mm |
| memory density | 1048576 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 32 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 256KX4 |
| Output characteristics | 3-STATE |
| Exportable | NO |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP32,.4 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum seat height | 5.08 mm |
| Maximum standby current | 0.002 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.13 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 10.16 mm |
| Base Number Matches | 1 |
| KM641005P-25 | KM641005P-20 | KM641005P-35 | |
|---|---|---|---|
| Description | Standard SRAM, 256KX4, 25ns, CMOS, PDIP32, 0.400 INCH, PLASTIC, DIP-32 | Standard SRAM, 256KX4, 20ns, CMOS, PDIP32, 0.400 INCH, PLASTIC, DIP-32 | Standard SRAM, 256KX4, 35ns, CMOS, PDIP32, 0.400 INCH, PLASTIC, DIP-32 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | DIP | DIP | DIP |
| package instruction | DIP, DIP32,.4 | DIP, DIP32,.4 | DIP, DIP32,.4 |
| Contacts | 32 | 32 | 32 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | 3A991.B.2.B | EAR99 |
| Maximum access time | 25 ns | 20 ns | 35 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 |
| JESD-609 code | e0 | e0 | e0 |
| length | 42.105 mm | 42.105 mm | 42.105 mm |
| memory density | 1048576 bit | 1048576 bit | 1048576 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 |
| Number of terminals | 32 | 32 | 32 |
| word count | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C |
| organize | 256KX4 | 256KX4 | 256KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Exportable | NO | NO | NO |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP32,.4 | DIP32,.4 | DIP32,.4 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | 5.08 mm | 5.08 mm | 5.08 mm |
| Maximum standby current | 0.002 A | 0.002 A | 0.002 A |
| Minimum standby current | 4.5 V | 4.5 V | 4.5 V |
| Maximum slew rate | 0.13 mA | 0.15 mA | 0.11 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO |
| technology | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| width | 10.16 mm | 10.16 mm | 10.16 mm |
| Base Number Matches | 1 | 1 | - |
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