KMM464S924BT1
Revision History
Revision 0.0 (June 7, 1999)
PC100 SODIMM
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.
• Symbol Change Notice
I
IL
I
IL
I
OL
Before
Input leakage current (inputs)
Input leakage current (I/O pins)
Output open @ DC characteristic table
I
LI
Io
After
Input leakage current
Output open @ DC characteristic table
•
Test Condition in
DC CHARACTERISTIC Change Notice
Symbol
I
CC2P ,
I
CC3P
I
CC2N ,
I
CC3N
I
CC4
Before
CKE
≤
V
IL
(max), t
CC
= 15ns
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
2 Banks activated
After
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
4 Banks activated
Revision 0.1 (July 5, 1999)
• Added Notes @OPERATING AC PARAMETER
Notes : 5. For -H/L, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.
Rev. 0.1 July 1999
KMM464S924BT1
KMM464S924BT1 SDRAM SODIMM
PC100 SODIMM
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
The Samsung KMM464S924BT1 is a 8M bit x 64 Synchro-
nous Dynamic RAM high density memory module. The Sam-
sung KMM464S924BT1 consists of four CMOS 8M x 16 bit
with 4banks Synchronous DRAMs in TSOP-II 400mil package
and a 2K EEPROM in 8-pin TSSOP package on a 144-pin
glass-epoxy substrate. Three 0.1uF decoupling capacitors are
mounted on the printed circuit board in parallel for each
SDRAM. The KMM464S924BT1 is a Small Outline Dual In-line
Memory Module and is intended for mounting into 144-pin
edge connector sockets.
Synchronous design allows precise cycle control with the use
of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable laten-
cies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications.
FEATURE
• Performance range
Part No.
KMM464S924BT1-FH /GH
KMM464S924BT1-FL / GL
•
•
•
•
•
Max Freq. (Speed)
100MHz (10ns @ CL=2)
100MHz (10ns @ CL=3)
Burst mode operation
Auto & self refresh capability (4096 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB :
Height (1,000mil)
, double sided component
PIN CONFIGURATIONS (Front side/back side)
Pin Front Pin
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
V
SS
DQM0
DQM1
V
DD
A0
A1
A2
V
SS
DQ8
DQ9
DQ10
DQ11
V
DD
DQ12
DQ13
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
V
SS
DQM4
DQM5
V
DD
A3
A4
A5
V
SS
DQ40
DQ41
DQ42
DQ43
V
DD
DQ44
DQ45
Pin Front
51
53
55
57
59
DQ14
DQ15
V
SS
NC
NC
Pin
52
54
56
58
60
Back
Pin
Front
DQ21
DQ22
DQ23
V
DD
A6
A8
V
SS
A9
A10/AP
V
DD
DQM2
DQM3
V
SS
DQ24
DQ25
DQ26
DQ27
V
DD
DQ28
DQ29
DQ30
DQ31
V
SS
**SDA
V
DD
Pin
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Back
DQ53
DQ54
DQ55
V
DD
A7
BA0
V
SS
BA1
A11
V
DD
DQM6
DQM7
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
**SCL
V
DD
DQ46 95
DQ47 97
V
SS
99
NC
101
NC
103
105
107
Voltage Key
109
CLK0 62 CKE0 111
V
DD
64
V
DD
113
RAS 66 CAS 115
WE
68 *CKE1 117
CS0
70 *A12 119
*CS1 72 *A13 121
DU
74 *CLK1 123
V
SS
76
V
SS
125
NC
78
NC
127
NC
80
NC
129
V
DD
82
V
DD
131
DQ16 84 DQ48 133
DQ17 86 DQ49 135
DQ18 88 DQ50 137
DQ19 90 DQ51 139
V
SS
92
V
SS
141
DQ20 94 DQ52 143
PIN NAMES
Pin Name
A0 ~ A11
BA0 ~ BA1
DQ0 ~ DQ63
CLK0
CKE0
CS0
RAS
CAS
WE
DQM0 ~ 7
V
DD
V
SS
SDA
SCL
DU
NC
Function
Address input (Multiplexed)
Select bank
Data input/output
Clock input
Clock enable input
Chip select input
Row address storbe
Column address strobe
Write enable
DQM
Power supply (3.3V)
Ground
Serial data I/O
Serial clock
Don′t use
No connection
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
* These pins are not used in this module.
**
These pins should be NC in the system
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 0.1 July 1999
KMM464S924BT1
PIN CONFIGURATION DESCRIPTION
Pin
CLK
CS
Name
System clock
Chip select
Input Function
Active on the positive going edge to sample all inputs.
PC100 SODIMM
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+t
SS
prior to valid command.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
CKE
Clock enable
A0 ~ A11
BA0 ~ BA1
RAS
CAS
WE
DQM0 ~ 7
DQ
0
~
63
Address
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
Data input/output
Power supply/ground
V
DD
/V
SS
Rev. 0.1 July 1999
KMM464S924BT1
FUNCTIONAL BLOCK DIAGRAM
CS0
DQM0
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQM4
PC100 SODIMM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U0
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS
U2
DQM2
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
SDRAM U0 ~ U3
SDRAM U0 ~ U3
SDRAM U0 ~ U3
SDRAM U0 ~ U3
SDRAM U0 ~ U3
10Ω
DQn
V
DD
Three 0.1uF X7R 0603Capacitors
per each SDRAM
Vss
To all SDRAMs
Every DQ pin of SDRAM
CS
DQM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
Serial PD
SCL
SA0
SA1 SA2
CS
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
A0 ~ A11, BA0 & 1
RAS
CAS
WE
CKE0
U1
U3
SDA
WP
U0
CLK0
U1
U2
U3
10Ω
CLK1
10pF
Note :
Use a zero ohm jumper to isolate A12 from the SDRAM pins in non-256Mbit designs.
Rev. 0.1 July 1999
KMM464S924BT1
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
4
50
PC100 SODIMM
Unit
V
V
°C
W
mA
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Symbol
V
DD
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ
3.3
3.0
0
-
-
-
Max
3.6
V
DDQ
+0.3
0.8
-
0.4
10
Unit
V
V
V
V
V
uA
1
2
I
OH
= -2mA
I
OL
= 2mA
3
Note
Notes :
1. V
IH
(max) = 5.6V AC.The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23°C, f = 1MHz, V
REF
= 1.4V
±
200 mV)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
OUT
Min
15
15
15
15
15
10
10
Max
25
25
25
21
25
12
12
Unit
pF
pF
pF
pF
pF
pF
pF
Parameter
Input capacitance (A
0
~ A
11
, BA0 ~ BA1)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Rev. 0.1 July 1999
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