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KMM466S823BT2-F0

Description
Synchronous DRAM Module, 8MX64, 7ns, CMOS
Categorystorage    storage   
File Size259KB,11 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KMM466S823BT2-F0 Overview

Synchronous DRAM Module, 8MX64, 7ns, CMOS

KMM466S823BT2-F0 Parametric

Parameter NameAttribute value
MakerSAMSUNG
package instructionDIMM, DIMM144,32
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N144
memory density536870912 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals144
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM144,32
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height29.21 mm
self refreshYES
Maximum standby current0.008 A
Maximum slew rate1.08 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch0.8 mm
Terminal locationDUAL
Base Number Matches1
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