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PMV20XN

Description
TRANSISTOR 4800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size811KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PMV20XN Overview

TRANSISTOR 4800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal

PMV20XN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)4.8 A
Maximum drain-source on-resistance0.025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SO
T2
PMV20XN
30 V, 4.8 A N-channel Trench MOSFET
Rev. 1 — 5 April 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
3
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source
voltage
gate-source
voltage
drain current
drain-source
on-state
resistance
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; I
D
= 4.8 A;
T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
-
Typ
-
-
-
19
Max Unit
30
12
4.8
25
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
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