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NCP349

Description
2 A AND GATE BASED MOSFET DRIVER, PDSO6
Categorysemiconductor    Analog mixed-signal IC   
File Size303KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

NCP349 Overview

2 A AND GATE BASED MOSFET DRIVER, PDSO6

NCP349 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals6
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply voltage 128 V
Minimum supply voltage 11.2 V
Rated supply voltage 15 V
Processing package description1.60 × 2 MM, 0.50 MM PITCH, 铅 FREE, DFN-6
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
surface mountYes
Terminal formNO
Terminal spacing0.5000 mm
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
Interface TypeAND gate FET driver
Rated output peak current limit2 A
NCP349
Positive Overvoltage
Protection Controller with
Internal Low R
ON
NMOS FET
The NCP349 is able to disconnect the systems from its output pin
when wrong input operating conditions are detected. The system is
positive overvoltage protected up to +28 V.
This device uses an internal NMOS and therefore, no external
device is necessary, reducing the system cost and the PCB area of the
application board.
The NCP349 is able to instantaneously disconnect the output from
the input, due to integrated Low R
ON
Power NMOS (65 mW), if the
input voltage exceeds the overvoltage threshold (OVLO) or falls
below the undervoltage threshold (UVLO).
At powerup (EN pin = low level), the V
out
turns on t
on
time after
the V
in
exceeds the undervoltage threshold.
The NCP349 provides a negative going flag (FLAG) output, which
alerts the system that a fault has occurred.
In addition, the device has ESD−protected input (15 kV Air) when
bypassed with a 1.0
mF
or larger capacitor.
Features
http://onsemi.com
6
1
DFN6
MN SUFFIX
CASE 506BM
MARKING DIAGRAM
1
XX MG
G
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package
Overvoltage Protection up to 28 V
On−Chip Low R
DS(on)
NMOS Transistor: 65 mW
Internal Charge Pump
Overvoltage Lockout (OVLO)
Undervoltage Lockout (UVLO)
Soft−Start
Alert
FLAG
Output
Shutdown
EN
Input
Compliance to IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
ESD Ratings: Machine Model = B
Human Body Model = 2
DFN6 1.6x2 mm Package
This is a Pb−Free Device
Applications
PIN CONNECTIONS
IN
GND
FLAG
1
2
3
(Top View)
PAD1
IN
6
5
4
EN
OUT
OUT
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 11 of this data sheet.
Cell Phones
Camera Phones
Digital Still Cameras
Personal Digital Applications
MP3 Players
Q
©
Semiconductor Components Industries, LLC, 2012
September, 2012
Rev. 3
1
Publication Order Number:
NCP349/D
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