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KV1952-154-0

Description
Variable Capacitance Diode, Ultra High Frequency, 8V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size164KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

KV1952-154-0 Overview

Variable Capacitance Diode, Ultra High Frequency, 8V, Silicon, Hyperabrupt

KV1952-154-0 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage8 V
ConfigurationSINGLE
Diode Capacitance Tolerance21.21%
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
minimum quality factor225
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationHYPERABRUPT
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