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RD6.2SB3-T2

Description
Zener Diode, 6.4V V(Z), 2.42%, 0.2W, Silicon, Unidirectional, SUPERMINI-2
CategoryDiscrete semiconductor    diode   
File Size55KB,12 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

RD6.2SB3-T2 Overview

Zener Diode, 6.4V V(Z), 2.42%, 0.2W, Silicon, Unidirectional, SUPERMINI-2

RD6.2SB3-T2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Certification statusNot Qualified
Nominal reference voltage6.4 V
surface mountYES
technologyZENER
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2.42%
Working test current5 mA
Base Number Matches1
DATA SHEET
ZENER DIODES
RD2.0S to RD120S
ZENER DIODES
200 mW 2 PINS SUPER MINI MOLD
DESCRIPTION
Type RD2.0S to RD120S Series are 2 PIN Super Mini
Mold Package zener diodes possessing an allowable power
dissipation of 200 mW.
PACKAGE DIMENSIONS
(in millimeter)
PACKAGE DIMENSIONS
FEATURES
• Sharp Breakdown characteristic.
• Vz: Applied E24 standard.
(in millimeters)
2.5±0.15
1.7±0.1
APPLICATIONS
Circuit for Constant Voltage, Constant Current, Wave form
Clipper, Surge absorber, etc.
0.19
Cathode
Indication
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Forward Current
Reverse Surge Power
Junction Temperature
Storage Temperature
P
I
F
P
RSM
T
j
T
stg
200 mW
100 mA
85 W (at t=10
µ
s/1 pulse) Show Fig. 12
150
°C
–55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. D11444EJ3V0DS00 (3rd edition)
Date Published March 1999 N CP(K)
Printed in Japan
©
0.11
+0.05
–0.01
0±0.05
0.9±0.1
0.3±0.05
1.25±0.1
,,
,,,,
1995
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