SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
A
S
F
KTC2027
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
Good Linearity of h
FE.
・Suffix
U : Qualified to AEC-Q101.
ex) KTC2027-U/PU
E
G
B
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
K
L
M
D
L
R
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
80
80
5
4
0.4
25
150
-55 150
UNIT
V
V
V
A
A
W
1
N
N
MILLIMETERS
_
10.0 + 0.3
_
15.0 + 0.3
_
2.70 + 0.3
0.76+0.09/-0.05
_
Φ3.2
+ 0.2
_
3.0 + 0.3
_
12.0 + 0.3
0.5+0.1/-0.05
_
13.6 + 0.5
_
3.7 + 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
_
2.54 + 0.1
_
6.8 + 0.1
_
4.5 + 0.2
_
2.6 + 0.2
0.5 Typ
J
P
H
2
3
1. BASE
2. COLLECTOR
Q
3. EMITTER
TO-220IS
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
O:70 140,
Y:120
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
240
TEST CONDITION
V
CB
=80V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=50mA, I
B
=0
I
C
=10mA, I
B
=0
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=3A
I
C
=3A, I
B
=0.3A
V
CE
=5V, I
C
=3A
V
CE
=5V, I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
80
5
70
15
-
-
-
-
TYP.
-
-
-
-
-
50
0.45
1.0
30
40
MAX.
30
100
-
-
240
-
1.5
1.5
-
-
V
V
MHz
pF
UNIT
A
A
V
V
2018. 04. 10
Revision No : 2
1/2
KTC2027
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
120
100
80
60
I
C
- V
CE
4.0
COLLECTOR CURRENT I
C
(A)
3.2
2.4
1.6
0.8
0
0
24
20
0
160
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.003
COMMON EMITTER
I
C
/I
B
=10
40
I
B
=20mA
COMMON EMITTER
Tc=25 C
0
Tc=-25 C
Tc=75 C
Tc=25 C
0
1
2
3
4
5
6
0.01
0.03
0.1
0.3
1
3 5
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
h
FE
- I
C
500
300
DC CURRENT GAIN h
FE
100
50
30
Tc=75 C
Tc=25 C
Tc=-25 C
SAFE OPERATING AREA
20
COLLECTOR CURRENT I
C
(A)
10
5
3
I
C
MAX(PULSED)
I
C
MAX
(CONTINUOUS)
DC
*
S
1m
S
10m
S
1s
10
5
3
0.002
0.01
0.03
0.1
COMMON EMITTER
V
CE
=5V
1
0.5
0.3
O
Tc PER
=2 A
5 TI
C ON
0.3
1
3
5
0.1
COLLECTOR CURRENT I
C
(A)
1
3
10
30
100
V
CEO
MAX.
* SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
*
0m
*
*
*
200
P
C
- Ta
COLLECTOR POWER DISSIPATION
P
C
(W)
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
Tc=Ta
INFINITE HEAT SINK
AMBIENT TEMPERATURE Ta ( C)
2018. 04. 10
Revision No : 2
2/2
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