KTC2027O datasheet, PDF - EEWORLD Datasheet

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KTC2027O: DescriptionPower Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size444KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC2027O Overview

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN

KTC2027O Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURES

Good Linearity of h

FE.

S

E

G

A

F

KTC2027

EPITAXIAL PLANAR NPN TRANSISTOR

C

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

P

Q

R

H

S

K

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j

T

stg

RATING

80

5

4

0.4

25

150

-55 150

UNIT

V

L

R

M

D

J

MILLIMETERS

_

10.0 + 0.3

_ 0.3

15.0 +

_

2.70 + 0.3

0.76+0.09/-0.05

_

Φ3.2

+ 0.2

_

3.0 + 0.3

_

12.0 + 0.3

0.5+0.1/-0.05

_

13.6 + 0.5

_

3.7 + 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

_

2.54 + 0.1

_

6.8 + 0.1

_

4.5 + 0.2

_

2.6 + 0.2

0.5 Typ

N

V

A

W

1

2

N

B

3

1. BASE

2. COLLECTOR

Q

3. EMITTER

Collector Power Dissipation (Tc=25 )

Junction Temperature

Storage Temperature Range

TO-220IS

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

h

FE

(2)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

(1) Classification

O:70 140,

Y:120

V

CE(sat)

V

BE

f

T

C

ob

240

V

CE

=5V, I

C

=3A

I

C

=3A, I

B

=0.3A

V

CE

=5V, I

C

=3A

V

CE

=5V, I

C

=0.5A

V

CB

=10V, I

E

=0, f=1MHz

15

-

50

0.45

1.0

30

40

-

1.5

-

V

MHz

pF

SYMBOL

I

CBO

I

EBO

V

(BR)CEO

V

(BR)EBO

h

FE

(1) (Note)

TEST CONDITION

V

CB

=80V, I

E

=0

V

EB

=5V, I

C

=0

I

C

=50mA, I

B

=0

I

C

=10mA, I

B

=0

V

CE

=5V, I

C

=0.5A

MIN.

-

80

5

70

TYP.

-

MAX.

30

100

-

240

UNIT

A

V

2007. 6. 1

Revision No : 1

P

1/2

KTC2027O Related Products

	KTC2027O	KTC2027Y
Description	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN
Maker	KEC	KEC
Parts packaging code	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	4 A	4 A
Collector-emitter maximum voltage	80 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	120
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz
Base Number Matches	1	1

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