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CAT28C65BHFK-12TE13

Description
8KX8 EEPROM 5V, 120ns, PDSO28, 0.300 INCH, EIAJ, SOIC-28
Categorystorage    storage   
File Size78KB,13 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

CAT28C65BHFK-12TE13 Overview

8KX8 EEPROM 5V, 120ns, PDSO28, 0.300 INCH, EIAJ, SOIC-28

CAT28C65BHFK-12TE13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSOIC
package instructionSOP,
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time120 ns
JESD-30 codeR-PDSO-G28
JESD-609 codee0
length17.9 mm
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height2.65 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width7.5 mm
Base Number Matches1
CAT28C65B
64K-Bit CMOS PARALLEL EEPROM
FEATURES
s
Fast read access times:
s
Commercial, industrial and automotive
– 90/120/150ns
s
Low power CMOS dissipation:
temperature ranges
s
Automatic page write operation:
– Active: 25 mA max.
– Standby: 100
µ
A max.
s
Simple write operation:
– 1 to 32 bytes in 5ms
– Page load timer
s
End of write detection:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
s
Fast write cycle time:
– Toggle bit
DATA
polling
– RDY/BUSY
BUSY
s
100,000 program/erase cycles
s
100 year data retention
– 5ms max
s
CMOS and TTL compatible I/O
s
Hardware and software write protection
DESCRIPTION
The CAT28C65B is a fast, low power, 5V-only CMOS
parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling, a RDY/BUSY pin and Toggle status bits
signal the start and end of the self-timed write cycle.
Additionally, the CAT28C65B features hardware and
software write protection.
The CAT28C65B is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC-
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
8,192 x 8
EEPROM
ARRAY
32 BYTE PAGE
REGISTER
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING,
TOGGLE BIT &
RDY/BUSY LOGIC
COLUMN
DECODER
I/O0–I/O7
A0–A4
RDY/BUSY
ADDR. BUFFER
& LATCHES
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1009, Rev. H
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