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IBM13N8734HC-365T

Description
Synchronous DRAM Module, 8MX72, 6.5ns, CMOS, DIMM-168
Categorystorage    storage   
File Size345KB,18 Pages
ManufacturerIBM
Websitehttp://www.ibm.com
Download Datasheet Parametric Compare View All

IBM13N8734HC-365T Overview

Synchronous DRAM Module, 8MX72, 6.5ns, CMOS, DIMM-168

IBM13N8734HC-365T Parametric

Parameter NameAttribute value
MakerIBM
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6.5 ns
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density603979776 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum standby current0.018 A
Maximum slew rate1.395 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
IBM11M4730C4M x 72 E12/10, 5.0V, Au.
Preliminary
Features
IBM13N8644HC
IBM13N8734HC
8M x 64/72 1 Bank Unbuffered SDRAM Module
• 168-Pin Unbuffered 8-Byte Dual In-Line Memory
Module
• 8Mx64/72 Synchronous DRAM DIMM
• Four speed sorts:
• -360, -365, -370 for PC100 applications
• -10 for 66MHz applications (typical)
• Inputs and outputs are LVTTL (3.3V) compatible
• Single 3.3V
±
0.3V Power Supply
• Single Pulsed RAS interface
• SDRAMs have 4 internal banks
• Module has 1 bank
• Fully Synchronous to positive Clock Edge
• Data Mask for Byte Read/Write control
• Auto Refresh (CBR) and Self Refresh
• Automatic and controlled Precharge commands
• Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page (Full-
Page supports Sequential burst only)
- Operation: Burst Read and Write or Multiple
Burst Read with Single Write
• Suspend Mode and Power Down Mode
• 12/9/2 Addressing (Row/Column/Bank)
• 4096 Refresh cycles distributed across 64ms
• Serial Presence Detect
• Card size: 5.25" x 1.375" x 0.167"
• Gold contacts
• SDRAMs in TSOP Type II Package
Description
IBM13N8644HC / IBM13N8734HC are unbuffered
168-pin Synchronous DRAM Dual In-Line Memory
Modules (DIMMs) which are organized as 8Mx64
and 8Mx72 high-speed memory arrays. The DIMMs
use 8 (8Mx64) or 9 (8Mx72) 8Mx8 SDRAMs in
400mil TSOP II packages. The DIMMs achieve
high-speed data transfer rates of up to 100MHz by
employing a prefetch/pipeline hybrid architecture
that supports the JEDEC 1N rule while allowing very
low burst power.
The -10 speed sort DIMMs comply with JEDEC
standards for 168-pin unbuffered SDRAM DIMMs.
The -360 speed sort DIMMs are compatible with the
Intel PC SDRAM unbuffered DIMM specification.
The -365 and -370 speed sorts are similar to the
-360 speed sort except that they have slower clock
access time (t
AC3
) and are targeted for more lightly
loaded PC100 applications.
All control, address, and data input/output circuits
are synchronized with the positive edge of the exter-
nally supplied clock inputs.
All inputs are sampled at the positive edge of each
externally supplied clock (CK0, CK2). Internal oper-
ating modes are defined by combinations of RAS,
CAS, WE, S0/S2, DQMB, and CKE0 signals. A
command decoder initiates the necessary timings
for each operation. A 14-bit address bus accepts
address information in a row/column multiplexing
arrangement.
Prior to any Access operation, the CAS latency,
burst type, burst length, and Burst operation type
must be programmed into the DIMM by address
inputs A0-A9 during the Mode Register Set cycle.
The DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two-pin IIC
protocol. The first 128 bytes of serial PD data are
used by the DIMM manufacturer. The last 128 bytes
are available to the customer.
All IBM 168-pin DIMMs provide a high-performance,
flexible 8-byte interface in a 5.25" long space-saving
footprint. Related products include both EDO DRAM
and SDRAM unbuffered DIMMs in both non-parity
x64 and ECC-Optimized x72 configurations.
Card Outline
(Front) 1
(Back) 85
08J0430.E24453
Released 4/98
10 11
94 95
40 41
124 125
84
168
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 18

IBM13N8734HC-365T Related Products

IBM13N8734HC-365T IBM13N8644HC-370T IBM13N8644HC-365T IBM13N8734HC-370T
Description Synchronous DRAM Module, 8MX72, 6.5ns, CMOS, DIMM-168 Synchronous DRAM Module, 8MX64, 7ns, CMOS, DIMM-168 Synchronous DRAM Module, 8MX64, 6.5ns, CMOS, DIMM-168 Synchronous DRAM Module, 8MX72, 7ns, CMOS, DIMM-168
Maker IBM IBM IBM IBM
Parts packaging code DIMM DIMM DIMM DIMM
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Contacts 168 168 168 168
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6.5 ns 7 ns 6.5 ns 7 ns
Maximum clock frequency (fCLK) 100 MHz 100 MHz 100 MHz 100 MHz
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 603979776 bit 536870912 bit 536870912 bit 603979776 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 64 64 72
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 168 168 168 168
word count 8388608 words 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 8MX72 8MX64 8MX64 8MX72
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096
Maximum standby current 0.018 A 0.016 A 0.016 A 0.018 A
Maximum slew rate 1.395 mA 1.24 mA 1.24 mA 1.395 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL

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