BF1005...
Silicon N-Channel MOSFET Tetrode
•
For low noise, high gain controlled
input stages up to 1 GHz
•
Operating voltage 5V
•
Integrated biasing network
Drain
AGC
HF
Input
G2
G1
HF Output
+ DC
GND
EHA07215
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF1005
BF1005R
BF1005W*
* on request only
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
MZs
MZs
MZs
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
S
≤
76 °C, BF1005, BF1005R
T
S
≤
94 °C, BF1005W
Storage temperature
Channel temperature
T
stg
T
ch
Symbol
V
DS
I
D
±I
G1/2SM
+V
G1SE
P
tot
200
200
-55 ... 150
150
°C
Value
8
25
10
3
V
mW
Unit
V
mA
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1
Sep-29-2004
BF1005...
Thermal Resistance
Parameter
Channel - soldering point
1)
BF1005, BF1005R
BF1005W
Symbol
R
thchs
≤
370
≤
280
Value
Unit
K/W
Electrical Characteristics
Parameter
DC Characteristics
Drain-source breakdown voltage
I
D
= 650 µA,
V
G1S
= 0 ,
V
G2S
= 0
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 ,
V
DS
= 0
Gate2 source breakdown voltage
±I
G2S
= 10 mA,
V
G1S
= 0 ,
V
DS
= 0
Gate1-source leakage current
V
G1S
= 0 ,
V
G2S
= 6 V
Gate 2 source leakage current
±V
G2S
= 8 V,
V
G1S
= 0 ,
V
DS
= 0
Drain current
V
DS
= 5 V,
V
G1S
= 0 ,
V
G2S
= 4 V
Operating current (selfbiased)
V
DS
= 5 V,
V
G2S
= 4 V
Gate2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 100 µA
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Symbol
min.
V
(BR)DS
+V
(BR)G1SS
±V
(BR)G2SS
+I
G1SS
±I
G2SS
I
DSS
I
DSO
V
G2S(p)
12
8
8
-
-
-
8
-
Values
typ.
-
-
-
100
-
-
10
1
max.
-
12
13
-
50
1.5
16
-
Unit
V
µA
nA
mA
V
2
Sep-29-2004
BF1005...
Electrical Characteristics
Parameter
AC Characteristics
Symbol
min.
(verified by random sampling)
g
fs
C
g1ss
C
dss
G
p
F
∆G
p
20
-
-
17
-
40
24
2.1
1.3
19
1.6
50
-
2.5
-
-
2.5
-
dB
dB
mS
pF
Forward transconductance
V
DS
= 5 V,
V
G2S
= 4.5 V
Gate1 input capacitance
V
DS
= 5 V,
V
G2S
= 4 V,
f
= 1 MHz
Output capacitance
V
DS
= 5 V,
V
G2S
= 4 V,
f
= 100 MHz
Power gain (self biased)
V
DS
= 5 V,
V
G2S
= 4 V,
f
= 800 MHz
Noise figure
V
DS
= 5 V,
V
G2S
= 4 V,
f
= 800 MHz
Gain control range
V
DS
= 5 V,
V
G2S
= 4V ...0V,
f
= 800 GHz
Values
typ.
max.
Unit
3
Sep-29-2004
BF1005...
Total power dissipation
P
tot
=
ƒ(T
S
)
BF1005, BF1005R
Total power dissipation
P
tot
=
ƒ(T
S
)
BF1005W
220
mW
220
mA
180
160
180
160
P
tot
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
P
tot
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Drain current
I
D
=
ƒ(V
G2S
)
Insertion power gain
|S
21
|² =
ƒ(V
G2S
)
12
mA
10
dB
0
-5
10
9
|S
21
|²
V
8
-10
-15
-20
I
D
7
6
-25
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
5
-30
-35
-40
-45
-50
-55
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
G2S
V
G2S
4
Sep-29-2004
BF1005...
Forward transfer admittance
|Y
21
| =
ƒ(V
G2S
)
26
mS
22
20
2.4
Gate 1 input capacitance
C
g1ss
=
ƒ(V
g2s
)
f = 200MHz
3
pF
|Y
21
|
18
16
14
12
10
8
6
C
g1ss
V
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0.4
0.2
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
5.5
V
G2S
V
G2S
Output capacitance
C
dss
=
ƒ(V
G2S
)
f
= 200MHz
3
pF
2.4
2.2
C
dss
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
G2S
5
Sep-29-2004
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