HYI18T1G400BC-2.5F datasheet, PDF

HYI18T1G400BC-2.5F: DescriptionDDR DRAM, 256MX4, 0.4ns, CMOS, PBGA68, PLASTIC, TFBGA-68; Categorystorage storage; File Size4MB，74 Pages; ManufacturerQIMONDA

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HYI18T1G400BC-2.5F Overview

DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA68, PLASTIC, TFBGA-68

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	QIMONDA
Parts packaging code	BGA
package instruction	TFBGA, BGA68,9X19,32
Contacts	68
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B68
length	17 mm
memory density	1073741824 bit
Memory IC Type	DDR DRAM
memory width	4
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	68
word count	268435456 words
character code	256000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA68,9X19,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	245
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum slew rate	0.27 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	10 mm
Base Number Matches	1

July 2007

HY[B/I]18T1G400B[F/C](L)

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HY[B/I]18T1G16[0/7]B[F/C](L/V)

1-Gbit Double-Data-Rate-Two SDRAM

DDR2 SDRAM

RoHS Compliant Products

Internet Data Sheet

Rev. 1.3

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