HYMD216645AL6R-K datasheet, PDF

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HYMD216645AL6R-K: DescriptionDDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184; Categorystorage storage; File Size144KB，16 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMD216645AL6R-K Overview

DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184

HYMD216645AL6R-K Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	1073741824 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	184
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.08 A
Maximum slew rate	1.18 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	20
Base Number Matches	1

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16Mx64 bits

Unbuffered DDR SDRAM DIMM

HYMD216646A(L)6R-K/H

DESCRIPTION

Preliminary

Hynix HYMD216645A(L)6R-K/H series are unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Mem-

ory Modules (DIMMs) which are organized as 16Mx64 high-speed memory arrays. Hynix HYMD216645A(L)6R-K/H

series consist of four 16Mx16 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix

HYMD216645A(L)6R-K/H series provide a high performance 8-byte interface in 5.25" width form factor of industry

standard. It is suitable for easy interchange and addition.

Hynix HYMD216645A(L)6R-K/H series are designed for high speed of up to 133MHz and offers fully synchronous oper-

ations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are

latched on the rising edges of the clock, Data, Data strobes(UDQS/LDQS) and Write data masks(UDM/LDM) inputs are

sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve

very high bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, pro-

grammable latencies and burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD216645A(L)6R-K/H series incorporate SPD(serial presence detect). Serial presence detect function is

implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify

DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

128MB (16M x 64) Unbuffered DDR DIMM based on

16Mx16 DDR SDRAM

JEDEC Standard 184-pin dual in-line memory module

(DIMM)

2.5V +/- 0.2V VDD and VDDQ Power supply

All inputs and outputs are compatible with SSTL_2

interface

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

•

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

Data inputs on DQS centers when write (centered

DQ)

Data strobes synchronized with output data for read

and input data for write

Programmable CAS Latency 2 / 2.5 supported

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

4096 refresh cycles / 64ms

ORDERING INFORMATION

Part No.

HYMD216645A(L)6R-K

HYMD216645A(L)6R-H

Power Supply

=2.5V

DDQ

=2.5V

Clock Frequency

133MHz (*DDR266A)

133MHz (*DDR266B)

Interface

SSTL_2

Form Factor

184pin Unbuffered DIMM

5.25 x 1.15 x 0.15 inch

* A means 2.5 of CAS Latency and B means 2.5 of CAS Latency

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.1/Dec. 02

HYMD216645AL6R-K Related Products

	HYMD216645AL6R-K	HYMD216645AL6R-H
Description	DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	SK Hynix	SK Hynix
Parts packaging code	DIMM	DIMM
package instruction	DIMM, DIMM184	DIMM, DIMM184
Contacts	184	184
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz
I/O type	COMMON	COMMON
JESD-30 code	R-XDMA-N184	R-XDMA-N184
memory density	1073741824 bit	1073741824 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64
Number of functions	1	1
Number of ports	1	1
Number of terminals	184	184
word count	16777216 words	16777216 words
character code	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	16MX64	16MX64
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM
Encapsulate equivalent code	DIMM184	DIMM184
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260	260
power supply	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified
refresh cycle	4096	4096
self refresh	YES	YES
Maximum standby current	0.08 A	0.08 A
Maximum slew rate	1.18 mA	1.18 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	20	20

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