10/10, 5.0V, Sn/Pb, 3210/10, 5.0V, Sn/Pb, AuMMDS47DSU-021044622. IBM11E2475B2M x AuMMDS47DSU-021044622.
IBM11D1475B 1M xAuMMDS47DSU-021044622. IBM11E1475B 2M x 3210/10, 5.0V, Sn/Pb,3210/10, 5.0V, Sn/Pb, AuMMDS47DSU-021044622. IBM11D2475B1M x 32
IBM11D1475B IBM11D2475B
IBM11E1475B IBM11E2475B
1M/2M x 32 Desktop ECC-on-SIMM
Features
• 72-Pin JEDEC Standard Single-In-Line
Memory Module
• Performance:
-6R
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Access Time From Address
t
RC
Cycle Time
t
HPC
EDO Mode Cycle Time
60ns
18ns
30ns
104ns
25ns
• High Performance CMOS process
• Single 5V,
±
0.25V Power Supply
• All inputs & outputs are fully TTL & CMOS
compatible
• Extended Data Out (EDO) access cycle
• Refresh Modes: RAS-Only, CBR and Hidden
Refresh
• 1024 refresh cycles distributed across 16ms
• 10/10 Addressing (Row/Column)
• Optimized for use in byte-write non-parity appli-
cations
• Sn/Pb tab and gold tab versions
• DRAMS in SOJ package.
• Provides ECC and retrofits to standard x32
socket
Description
The IBM11D1475B/IBM11D2475B are 4MB/8MB
industry standard 72-pin 4-byte single in-line mem-
ory modules (SIMMs) that have a fully functional,
retrofittable and plug-compatible on-board error-cor-
recting code (ECC). The ECC function is completely
self-contained and transparent to the system. The
module is manufactured using EDO DRAMs. The
use of EDO DRAMs allows for a reduction in Page
Mode Cycle Time from 40ns (Fast Page) to 25ns
(EDO, 6Rns sort). The modules are organized as
2Mx32 high speed memory arrays, configured as
two 1Mx32 banks -each independently selectable
via unique RAS inputs. The 8MB assembly is manu-
factured with 24 1Mx4 devices, each in a 300mil
SOJ package, and is compatible with the JEDEC
72-Pin SIMM standard.
The IBM11D1475B is a 4MB version, manufactured
with 12 1Mx4 devices each in a 300mil SOJ pack-
age.
The ECC-on-SIMM modules correct single-bit errors
that may occur in any byte of SIMM data with no
performance loss.
Card Outline
1M x 32
1
36 37
72
2M x 32
1
36 37
72
75H3507
SA14-4343-00
Released 6/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 22
IBM11D1475B IBM11D2475B
IBM11E1475B IBM11E2475B
1M/2M x 32 Desktop ECC-on-SIMM
Pin Description
RAS0, RAS2
RAS0 - RAS3
CAS0 - CAS3
WE
A0 - A9
DQ0-7, 9-16,
18-25, 27-34
V
CC
V
SS
NC
PD1 - PD4
TP0 - TP3
Row Address Strobe
(4MB)
Row Address Strobe
(8MB)
Column Address Strobe
Read/write Input
Address Inputs
Data Input/output
Power (+5V)
Ground
No Connect
Presence Detects
Test Points
Pinout
Pin #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Name
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
NC
DQ4
DQ22
DQ5
DQ23
DQ6
Pin #
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Name
DQ24
DQ7
DQ25
A7
TP0
V
CC
A8
A9
RAS3*
RAS2
NC
NC
NC
NC
V
SS
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1*
TP1
WE
NC
Pin #
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Name
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
TP2
PD1
PD2
PD3
PD4
TP3
V
SS
1. DQ numbering is compatible with parity (x36) SIMMs.
2. * RAS1 and RAS3 are “NC” on 4MB SIMM.
3. TPs are used during manufacturing test.
Ordering Information
Part Number
IBM11D1475B-6RJ
IBM11E1475B-6RJ
IBM11D2475B-6RJ
IBM11E2475B-6RJ
Organization
1M x 32
6Rns
2M x 32
10/10
Speed
Addr.
Leads
Sn/Pb
Au
Sn/Pb
Au
Dimensions
4.25” x 1.04” x .397”
SOJ
4.25” x 1.40” x .397”
1
Package
Notes
1. DRAM package designator appended to speed portion of part number on assemblies beginning with DRAM die rev G.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H3507
SA14-4343-00
Released 6/96
Page 2 of 22
IBM11D1475B IBM11D2475B
IBM11E1475B IBM11E2475B
1M/2M x 32 Desktop ECC-on-SIMM
Absolute Maximum Ratings
Symbol
V
CC
V
IN
V
OUT
T
C
T
STG
P
D
I
OUT
Parameter
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature (Case)
Storage Temperature
Power Dissipation
Short Circuit Output Current
Rating
-0.3 to +6.5
-0.3 to (V
CC
+ 0.3)
-0.3 to (V
CC
+ 0.3)
0 to +60
-40 to +125
12 (4MB) 24(8MB)
50
Units
V
V
V
°C
°C
W
mA
Notes
1
1
1
1
1
1, 2
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
2. Maximum power occurs when all banks are active (refresh cycle).
Recommended DC Operating Conditions
Symbol
V
CC
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
Parameter
(T
C
= 0 to 60
°
C)
Min
4.75
2.4
0.0
Typ
5.0
—
—
Max
5.25
V
CC
0.8
Units
V
V
V
Notes
1
1, 2
1, 2
1. All voltages referenced to V
SS
.
2. V
IH
may overshoot to V
CC
+ 2.0V for pulse widths of
≤
4.0ns (or V
CC
+ 1.0V for
≤
8.0ns). Additionally, V
IL
may undershoot to -2.0V
for pulse widths
≤
4.0ns (or -1.0V for
≤
8.0ns). Pulse widths measured at 50% points with amplitude measured peak to DC refer-
ence.
Capacitance
Symbol
C
I1
C
I2
C
I3
C
I4
C
I5
C
I/O
(T
C
= 0 to +60°C, V
CC
= 5.0V
±
0.25V)
Parameter
1M x 32
Max
78
70
70
50
94
12
2M x 32
Max
161
70
70
70
188
12
Units
pF
pF
pF
pF
pF
pF
Input Capacitance (A0-A9)
Input Capacitance (4MB: RAS0, 8MB: RAS0, 1)
Input Capacitance (4MB: RAS2, 8MB: RAS2, 3)
Input Capacitance (CAS)
Input Capacitance (WE)
Output Capacitance (DQ0 - DQ34)
75H3507
SA14-4343-00
Released 6/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 22
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