860 - 894 MHz
Small-Cell Power Amplifier Module
FEATURES
•
•
•
•
•
•
•
•
InGaP HBT Technology
-47 dBc ACPR @
610
MHz, +27 dBm
29.5 dB Gain
High Efficiency
Low Transistor Junction Temperature
Matched for a 50
Ω
System
Low Profile Miniature Surface Mount Package;
RoHS Compliant
Multi-Carrier Capability
AWB7225
PRELIMINARY DATA SHEET - Rev 1.0
APPLICATIONS
•
•
•
LTE, WCDMA, and HSDPA Air Interfaces
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7225 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Consisting of
two parallel path high linearity, high efficiency power
amplifiers, the device meets the extremely demanding
needs of small cell infrastructure architectures.
Designed for LTE, WCDMA and HSDPA air interfaces
operating in the 860 MHz to 894 MHz bands, the
AWB7225 delivers up to +27 dBm of LTE (E-TM1.1)
Vcc1
power through an external 90-degree hybrid coupler,
with an ACPR of -47 dBc. The device operates from
a convenient +4.5 V supply and provides 29.5 dB
of RF gain. The AWB7225 is manufactured using
an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Its 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50
V
system.
Vcc2
RF1 Input
RF Input
Source
90
o
Hybrid
Coupler
(external )
Matching
Network
Matching
Network
RF1 Output
Combined
RF Output
90
o
Hybrid
Coupler
(external )
Bias
Network
Power
Detector
RF2 Input
Matching
Network
Matching
Network
RF2 Output
Bias
Network
Power
Detector
Vref
Detector
Output
Figure 1: Block Diagram
06/2013
AWB7225
V
REF
GND
RF2
IN
V
CC1
RF1
IN
N/C
DET
OUT
1
2
3
4
5
6
7
GND
14 GND
13 GND
12 RF2
OUT
11 V
CC2
10 RF1
OUT
9
8
GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
NAME
V
REF
GND
RF2
IN
V
CC1
RF1
IN
N/C
DET
OUT
GND
GND
RF1
OUT
V
CC2
RF2
OUT
GND
GND
DESCRIPTION
Reference Voltage
Ground
RF2 Input
Supply Voltage
RF1 Input
No Connection
Detector Output
Ground
Ground
RF1 Output
Supply Voltage
RF2 Output
Ground
Ground
2
PRELIMINARY DATA SHEET - Rev 1.0
06/2013
AWB7225
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
RF Output Power (P
OUT
)
(1)
ESD Rating
Human Body Model
(2)
Charged Device Model
(3)
MSL Rating
(4)
Junction Temperature (T
j
)
Storage Temperature (T
STG
)
MIN
0
0
-
Class 1C
Class IV
TBD
-
-40
MAX
+5
+3.5
+30
-
-
-
+150
+150
°C
°C
UNIT
V
V
dBm
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure to
absolute ratings for extended periods of time may adversely affect reliability.
Notes:
(1) At output of external 90° hybrid coupler.
(2) JEDEC JS-001-2010.
(3) JEDEC JESD22-C101D.
(4) 260
°C
peak reflow.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
RF Output Power (P
OUT
)
Case Temperature (T
C
)
MIN
860
+3.6
+2.75
0
-
-40
TYP
-
+4.5
+2.85
-
+27
-
MAX
894
+4.65
+2.95
+0.5
-
+85
UNIT
MHz
V
V
dBm
°C
PA "on"
PA "shut down"
Using external 90hybrid couplers
COMMENTS
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
3
PRELIMINARY DATA SHEET - Rev 1.0
06/2013
AWB7225
Table 4: Electrical Specifications
(T
C
= +25 °C, V
CC
= +4.5 V, V
REF
= +2.85 V, 50
Ω
system)
PARAMETER
Gain
(2)
ACPR
(1), (2), (3)
@ 10 MHz
@ 20 MHz
Power-Added Efficiency
Thermal Resistance
(4)
Supply Current
(1), (2), (3)
Quiescent Current (Icq)
Reference Current
Leakage Current
Harmonics
2fo
3fo, 4fo
(2)
(1), (2), (3)
MIN
-
-
-
-
-
-
-
-
-
-
-
(2)
(2)
TYP
29.5
-47
-57
13.5
14.5
823
295
10
3
-50
-60
20
20
+35.5
MAX
-
-
-
-
-
-
-
-
10
-
-
-
-
-
UNIT
dB
COMMENTS
860 - 894 MHz
dBc
%
C/W
mA
mA
mA
µA
through V
REF
pin
V
CC
= +5 V, V
REF
= 0 V
Junction to Case
Total through V
CC
pins
dBc
dB
dB
dBm
CW tone
P
OUT
≤
+27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all voltage and
temperature operating ranges
V
CC
= +4.5 V, P
OUT
= + 27 dBm
Applies over full operating
temperature range
Input Return Loss
-
-
-
Output Return Loss
P1dB
Spurious Output Level
(2)
(all spurious outputs)
-
-
-60
dBc
Load mismatch stress with no
permanent degradation or failure
(2)
8:1
-
-
VSWR
Notes:
(1) ACPR and Efficiency measured at 877 MHz.
(2) P
OUT
= +27 dBm, using specified external 90hybrid
couplers.
(3) LTE E-TM1.1 (10 MHz).
(4) Use only V
CC2
(pin 11) current when calculating device junction temperature.
4
PRELIMINARY DATA SHEET - Rev 1.0
06/2013
AWB7225
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the V
REF
voltage.
V
CC1
47uF
V
REF
0.1uF
10uF
0.1uF
1000pF
V
REF
GND
5
4
3
90
o
Hybrid
Coupler
6
1
2
RF2
IN
V
CC1
RF1
IN
N/C
DET
OUT
1000pF
0.1uF
10uF
V
CC2
100uF
1
2
3
4
5
6
7
GND
at slug
14
13
12
AWB7225
11
10
9
8
GND
GND
RF2
OUT
V
CC2
RF1
OUT
GND
GND
2
1
6
90
o
Hybrid
Coupler
3
4
5
50Ω
RF Input
RF Output
50Ω
4.7KΩ
DET
OUT
0.1uF
100KΩ
Note: Recommended 90 hybrid couplers
are muRata LDJ2H825M03FA062
Figure 3: Application Circuit Schematic
5
PRELIMINARY DATA SHEET - Rev 1.0
06/2013
Embedded System
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