256K X 36, 512K X 18
Advance
2.5V Synchronous SRAMs
Information
2.5V I/O, Burst Counter
IDT71T67702
Flow-Through Outputs, Single Cycle Deselect
IDT71T67902
Features
x
x
x
x
x
x
x
x
256K x 36, 512K x 18 memory configurations
Supports fast access times:
– 7.5ns up to 117MHz clock frequency
– 8.0ns up to 100MHz clock frequency
– 8.5ns up to 87MHz clock frequency
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
2.5V core power supply
Power down controlled by ZZ input
2.5V I/O supply (V
DDQ
)
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP),119 ball grid array (BGA) and 165 fine pitch ball
grid array (fBGA)
Description
The IDT71T67702/7902 are high-speed SRAMs organized as
256K x 36/512K x 18. The IDT71T67702/7902 SRAMs contain write,
data, address and control registers. There are no registers in the data
output path (flow-through architecture). Internal logic allows the SRAM to
generate a self-timed write based upon a decision which can be left until
the end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71T67702/7902 can provide four cycles of
data for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will flow-through from the
array after a clock-to-data access time delay from the rising clock edge of
the same cycle. If burst mode operation is selected (ADV=LOW), the
subsequent three cycles of output data will be available to the user on the
next three rising clock edges. The order of these three addresses are
defined by the internal burst counter and the
LBO
input pin.
The IDT71T67702/7902 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Asynchronous
N/A
N/A
N/A
N/A
Synchronous
N/A
N/A
5291 tbl 01
Pin Description Summary
A
0
-A
18
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1
,
BW
2
,
BW
3
,
BW
4
(1)
CLK
ADV
ADSC
ADSP
LBO
ZZ
TMS
TDI
TCK
TDO
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
Test Mode Select
Test Data Input
Test Clock
Test Data Output
Data Input / Output
Core Power, I/O Power
Ground
NOTE:
1.
BW
3
and
BW
4
are not applicable for the IDT71T67902.
JULY 2001
1
DSC-5291/01
©1999 Integrated Device Technology, Inc.
IDT71T67702, IDT71T67902, 256K x 36, 512K x 18, 2.5V Synchronous SRAMS with
2.5V I/O, Flow-Through Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Pin Definitions
(1)
Symbol
A
0
-A
18
ADSC
ADSP
ADV
Pin Function
Address Inputs
Address Status
(Cache Controller)
Address Status
(Processor)
Burst Address
Advance
Byte Write Enable
I/O
I
I
I
I
Active
N/A
LOW
LOW
LOW
Description
Synchronous Address inputs. The address register is trigge red by a combi-nation of the
rising e dge of CLK and
ADSC
Low or
ADSP
Low and
CE
Low.
Synchronous Address Status from Cache Controller.
ADSC
is an active LOW input that is
used to load the address registers with new addresses.
Synchronous Address Status from Processor.
ADSP
is an active LOW inp ut that is used to
load the address registers with new addresses.
ADSP
is gated by
CE.
Synchronous Address Advance.
ADV
is an active LOW input that is used to advance the
internal burst counter, controlling burst access after the initial address is loaded. When the
input is HIGH the burst counter is not incremented; that is, there is no address advance.
Synchronous byte write enable gates the byte write inputs
BW
1
-BW
4
. If
BWE
is LOW at the
rising edge of CLK then
BWx
inputs are passed to the next stage in the circuit. If
BWE
is
HIGH then the byte write inputs are blocked and only
GW
can initiate a write cycle.
Synchronous byte write enables.
BW
1
controls I/O
0-7
, I/O
P1
,
BW
2
controls I/O
8-15
, I/O
P2
, etc.
Any active byte write causes all outputs to be disabled.
Synchronous chip enable.
CE
is used with CS
0
and
CS
1
to enable the IDT71T67702/7902.
CE
also gates
ADSP.
This is the clock input. All timing references for the device are made with respect to this
input.
Synchronous active HIGH chip select. CS
0
is used with
CE
and
CS
1
to enable the chip.
Synchrono us active LOW chip select.
CS
1
is used with
CE
and CS
0
to enable the chip.
Synchronous global write enable. This input will write all four 9-bit data bytes when LOW
on the rising edge of CLK.
GW
supersedes individual byte write enables.
Synchronous data input/output (I/O) pins. The data input path is registered, triggered by
the rising edge of CLK. The data output path is flow-through (no output register).
Asynchro nous burst order selection input. When
LBO
is HIGH, the inter-leaved burst
sequence is selected. When
LBO
is LOW the Linear burst sequence is selected.
LBO
is a
static input and must not change state while the device is operating.
Asynchronous output enable. When
OE
is LOW the data output drivers are enabled on the
I/O pins if the chip is also selected. When
OE
is HIGH the I/O p ins are in a high-
impedance state.
Gives input command for TAP controller; sampled on rising edge of TCK.
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK.
Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured on
rising edge of TCK, while test outputs are driven from falling edge of TCK.
Serial ouput of registers placed between TDI and TDO. This output is active depending on
state fo TAP controller.
2.5V core power supply.
2.5V I/O Supply.
Ground.
NC pins are not electrically connected to the device.
Asynchronous sleep mode input. ZZ HIGH will g ate the CLK internally and power down
the IDT71T67702/7902 to its lowest power consumption level. Data retention is guaranteed
in Sleep Mode.
5291 tbl 02
BWE
I
LOW
BW
1
-BW
4
CE
CLK
CS
0
CS
1
GW
I/O
0
-I/O
31
I/O
P1
-I/O
P4
LBO
Individual Byte
Write Enables
Chip Enable
Clock
Chip Select 0
Chip Select 1
Global Write
Enable
Data Input/Output
Linear Burst Order
I
I
I
I
I
I
I/O
I
LOW
LOW
N/A
HIGH
LOW
LOW
N/A
LOW
OE
Output Enable
I
LOW
TMS
TDI
TCK
TDO
V
DD
V
DDQ
V
SS
NC
ZZ
Test Mode Select
Test Data Input
Test Clock
Test Data Output
Power Supply
Power Supply
Ground
No Connect
Sleep Mode
I
I
I
O
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
HIGH
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71T67702, IDT71T67902, 256K x 36, 512K x 18, 2.5V Synchronous SRAMS with
2.5V I/O, Flow-Through Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Functional Block Diagram
LBO
ADV
CEN
Burst
Sequence
INTERNAL
ADDRESS
CLK
ADSC
ADSP
CLK EN
Binary
Counter
CLR
2
Burst
Logic
18/19
A0*
A1*
Q0
Q1
256K x 36/
512K x 18-
BIT
MEMORY
ARRAY
2
A
0
,A
1
18/19
A
2 -
A
18
36/18
36/18
A
0–
A
17/18
GW
BWE
BW
1
ADDRESS
REGISTER
Byte 1
Write Register
Byte 1
Write Driver
9
Byte 2
Write Register
Byte 2
Write Driver
BW
2
Byte 3
Write Register
9
Byte 3
Write Driver
BW
3
Byte 4
Write Register
9
Byte 4
Write Driver
BW
4
9
CE
CS
0
CS
1
D
Q
Enable
Register
DATA INPUT
REGISTER
CLK EN
ZZ
Powerdown
OE
OE
I/O
0
–I/O
31
I/O
P1–
I/O
P4
36/18
OUTPUT
BUFFER
,
5291 drw 01
6.42
3
IDT71T67702, IDT71T67902, 256K x 36, 512K x 18, 2.5V Synchronous SRAMS with
2.5V I/O, Flow-Through Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
V
TERM
(3,6)
Rating
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Operating Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Commercial
-0.5 to +3.6
-0.5 to V
DD
-0.5 to V
DD
+0.5
-0.5 to V
DDQ
+0.5
-0 to +70
-55 to +125
-55 to +125
2.0
50
Unit
V
V
V
V
o
Recommended Operating
Temperature Supply Voltage
Grade
Commercial
Temperature
(1)
0°C to +70°C
V
SS
0V
V
DD
2.5V±5%
V
DDQ
2.5V±5%
5291 tbl 04
NOTE:
1. T
A
is the "instant on" case temperature.
V
TERM
(4,6)
V
TERM
(5,6)
T
A
(7)
T
BIAS
T
STG
P
T
I
OUT
Recommended DC Operating
Conditions
Symbol
V
DD
V
DDQ
V
SS
V
IH
V
IH
V
IL
Parameter
Core Supply Voltage
I/O Supply Voltage
Ground
Input High Voltage - Inputs
Input High Voltage - I/O
Input Low Voltage
Min.
2.375
2.375
0
1.7
1.7
-0.3
(1)
Typ.
2.5
2.5
0
____
____
____
C
C
C
Max.
2.625
2.625
0
V
DD
+0.3
V
DDQ
+0.3
0.7
Unit
V
V
V
V
V
V
5291 tbl 05
o
o
W
mA
5291 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
DD
terminals only.
3. V
DDQ
terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed V
DDQ
during power supply ramp up.
7. T
A
is the "instant on" case temperature.
NOTE:
1. V
IL
(min) = –0.8V for pulse width less than t
CYC/2
, once per cycle.
TQFP Capacitance
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
(T
A
= +25°C, f = 1.0MHz)
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
5
7
Unit
pF
pF
5291 tbl 06
BGA Capacitance
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
(T
A
= +25°C, f = 1.0MHz)
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
7
7
Unit
pF
pF
5291 tbl 06a
fBGA Capacitance
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
(T
A
= +25°C, f = 1.0MHz)
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
TBD
TBD
Unit
pF
pF
5291 tb l 06b
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
4
IDT71T67702, IDT71T67902, 256K x 36, 512K x 18, 2.5V Synchronous SRAMS with
2.5V I/O, Flow-Through Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Pin Configuration 256K x 36, 100-pin TQFP
A
6
A
7
CE
CS
0
BW
4
BW
3
BW
2
BW
1
CS
1
V
DD
V
SS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
8
A
9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/O
P3
I/O
16
I/O
17
V
DDQ
V
SS
I/O
18
I/O
19
I/O
20
I/O
21
V
SS
V
DDQ
I/O
22
I/O
23
V
SS
(1)
V
DD
NC
V
SS
I/O
24
I/O
25
V
DDQ
V
SS
I/O
26
I/O
27
I/O
28
I/O
29
V
SS
V
DDQ
I/O
30
I/O
31
I/O
P4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/O
P2
I/O
15
I/O
14
V
DDQ
V
SS
I/O
13
I/O
12
I/O
11
I/O
10
V
SS
V
DDQ
I/O
9
I/O
8
V
SS
NC
V
DD
ZZ
(2)
I/O
7
I/O
6
V
DDQ
V
SS
I/O
5
I/O
4
I/O
3
I/O
2
V
SS
V
DDQ
I/O
1
I/O
0
I/O
P1
5291 drw 02a
,
LBO
A
5
A
4
A
3
A
2
A
1
A
0
NC
NC
V
SS
V
DD
Top View
NOTES:
1. Pin 14 does not have to be directly connected to V
SS
as long as the input voltage is < V
IL
.
2. Pin 64 can be left unconnected and the device will always remain in active mode.
6.42
5
NC
A
17
A
10
A
11
A
12
A
13
A
14
A
15
A
16
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