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IRKL230-16D25N

Description
Silicon Controlled Rectifier, 510A I(T)RMS, 230000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, POWER, MAGN-A-PAK-5
CategoryAnalog mixed-signal IC    Trigger device   
File Size183KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRKL230-16D25N Overview

Silicon Controlled Rectifier, 510A I(T)RMS, 230000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, POWER, MAGN-A-PAK-5

IRKL230-16D25N Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PUFM-D3
Contacts5
Reach Compliance Codeunknown
Other featuresUL APPROVED
Shell connectionISOLATED
Nominal circuit commutation break time150 µs
ConfigurationSINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Quick connection descriptionG-GR
Description of screw terminalsA-K-AK
Maximum holding current500 mA
JESD-30 codeR-PUFM-D3
Maximum leakage current50 mA
On-state non-repetitive peak current7500 A
Number of components1
Number of terminals3
Maximum on-state current230000 A
Maximum operating temperature130 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current510 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage1600 V
Repeated peak reverse voltage1600 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Trigger device typeSCR
Base Number Matches1
Bulletin I27102 rev. A 10/97
IRK. SERIES
SCR / SCR and SCR / DIODE
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
MAGN-A-pakä Power Modules
170A
230A
250A
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are elec-
trically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can
be interconnected to form single phase or three phase
bridges or as AC-switches when modules are connected in
anti-parallel mode.
These modules are intended for general purpose applica-
tions such as battery chargers, welders and plating equip-
ment and where high voltage and high current are required
(motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
I
T(AV)
@ 85°C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I
2
√t
V
DRM
/ V
RRM
T
J
range
IRK.170..
170
377
5100
5350
131
119
1310
IRK.230..
230
510
7500
7850
280
256
2800
IRK.250..
Units
250
555
8500
8900
361
330
3610
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
Up to1600 Up to 2000 Up to1600
-40 to 130
C
www.irf.com
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