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2SC2488

Description
Silicon NPN Power Transistor
File Size183KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SC2488 Overview

Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
2SC2488
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 150V(Min.)
·Good
Linearity of h
FE
·Wide
Area of Safe Operation
·Complement
to Type 2SA1064
APPLICATIONS
·Designed
for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
150
V
150
V
5
V
8
A
12
A
100
W
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
P
C
T
j
150
T
stg
Storage Temperature
-65~150
isc Website:www.iscsemi.cn
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