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2SC3371

Description
Silicon NPN Power Transistor
File Size177KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SC3371 Overview

Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3371
DESCRIPTION
·Collector-Emiiter
Sustaining Voltage-
: V
CEO(SUS)
= 500V(Min.)
·Low
Collector Saturation Voltage
: V
CE(sat)
= 1.0V(Max.)@ I
C
= 8A
·High
Speed Switching
·
APPLICATIONS
·Designed
for power switching applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
800
V
500
V
7
V
15
A
30
A
5
A
200
W
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
P
C
T
j
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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