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2SC3376

Description
Silicon NPN Power Transistor
File Size209KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SC3376 Overview

Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3376
DESCRIPTION
·Collector-Emiiter
Breakdown Voltage-
: V
(BR)CEO
= 800V(Min.)
·High
Speed Switching
·
APPLICATIONS
·Switching
regulator and high voltage switching applications.
·High
speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
900
V
800
V
7
V
3
A
5
A
1
A
60
W
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
P
C
T
j
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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