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MURF1020CT

Description
Rectifier Diode, 1 Phase, 2 Element, 10A, Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size245KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric View All

MURF1020CT Overview

Rectifier Diode, 1 Phase, 2 Element, 10A, Silicon, TO-220AB, ITO-220AB, 3 PIN

MURF1020CT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PSFM-T3
Reach Compliance Codecompliant
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MURF1020CT
Technical Data
Data Sheet N0345, Rev. A
MURF1020CT ULTRAFAST RECTIFIER
Features
Ultra-Fast Switching
High Current Capability
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
ITO-220AB
Additional testing can be offered upon request
Circuit Diagram
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=100°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
200
5(Per Leg)
10(Per Device)
80
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop(Per Leg)*
Reverse Current(Per Leg)*
Reverse Recovery Time(Per Leg)
RSM Isolation Voltage
(t=1.0 second,R.H.<
=30%,
T
A
=25C)
Symbol
V
F1
V
F2
I
R1
I
R2
t
rr
Condition
@ 10A, Pulse, T
J
= 25C
@ 10A, Pulse, T
J
= 100C
@V
R
= rated V
R
T
J
= 25C
@V
R
= rated V
R
T
J
= 100C
I
F
=500mA, I
R
=1A,and I
rm
=250mA
Clip mouting, the epoxy body away
from the heatsink edge by more than
0.110”along the lead direction.
Clip mouting, the epoxy body is
inside the heatsink
Screw mounting, the epoxy body is
inside the heatsink
Typ.
1.0
-
0.01
-
30
-
-
-
Max.
1.2
1.0
10
100
35
4500
3500
1500
V
Units
V
V
μA
μA
ns
V
1so
* Pulse width < 300 µs, duty cycle < 2%
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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