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2SC3480

Description
Silicon NPN Power Transistor
File Size204KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SC3480 Overview

Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3480
DESCRIPTION
·High
Breakdown Voltage-
: V
CBO
= 1500V (Min)
·High
Switching Speed
·High
Reliability
·Built-in
Damper Diode
APPLICATIONS
·Designed
for high definition CRT display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
1500
V
800
V
7
V
3.5
A
80
W
V
EBO
Emitter-Base Voltage
I
C
Collector Current- Continuous
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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