INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3480
DESCRIPTION
·High
Breakdown Voltage-
: V
CBO
= 1500V (Min)
·High
Switching Speed
·High
Reliability
·Built-in
Damper Diode
APPLICATIONS
·Designed
for high definition CRT display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
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VALUE
UNIT
1500
V
800
V
7
V
3.5
A
80
W
V
EBO
Emitter-Base Voltage
I
C
Collector Current- Continuous
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3480
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 5mA; R
BE
= ∞
800
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 5mA; I
E
= 0
1500
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 200mA; I
C
= 0
7
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 0.8A
8.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 0.8A
1.5
V
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
V
ECF
C-E Diode Forward Voltage
f
T
Current-Gain—Bandwidth Product
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V
CB
= 800V; I
E
= 0
V
EB
= 4V; I
C
= 0
40
I
C
= 0.5A; V
CE
= 5V
8
I
F
= 2.5A
I
C
= 0.5A; V
CE
= 10V
10
μA
130
mA
2.0
V
3
MHz
isc Website:www.iscsemi.cn
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