3CN00397GZ datasheet, PDF - EEWORLD Datasheet

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3CN00397GZ: DescriptionOptoelectronic Device; CategoryLED optoelectronic/LED photoelectric; File Size60KB，2 Pages; ManufacturerMietec Alcatel

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3CN00397GZ Overview

Optoelectronic Device

3CN00397GZ Parametric

Parameter Name	Attribute value
Maker	Mietec Alcatel
Reach Compliance Code	unknown
Base Number Matches	1

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Alcatel 1916 LMM

12800 ps/nm WDM 2.5 Gbit/s digital Laser Module

with integrated electro-absorption Modulator

Description

This Alcatel 1916 LMM contains an Alcatel

DFB laser with monolithically integrated

electro-absorption modulator (ILM). This

chip provides much lower dispersion

penalties than a directly modulated DFB,

without the complexity of LiNbO3 external

modulators. The Alcatel 1916 LMM is

optimized for ultra long-haul transmission

systems using non-dispersion shifted and

optical fiber amplifiers.

Features

•

Wavelength selection according to ITU-T G.692

Industry-standard 14-pin butterfly package

High frequency butterfly package with

Ω

RF impedance

Low drive voltage (≤ 2 Vpp)

InGaAsP monolithically integrated DFB laser and

modulator chip

Internal optical isolator

STM-16 and OC-48 ultra long-haul

transmission systems

Terminals for submarine transmission systems

Digital WDM CATV transmission

Applications

•

Very low dispersion penalty over 750 km

of fiber for 2.5 Gbit/s operation

Optical characteristics

Parameter

Threshold current

Operating current

Optical output power

Laser forward voltage

Emission wavelength

∆(emitted-target)

wavelength

Laser chip temperature range for tunability

Modulator bias voltage

Modulator drive voltage

Dynamic extinction ratio

Side mode suppression

Cut off frequency

RF return loss

Dispersion penalty

Tracking error

Rise time / Fall time

Wavelength drift vs Tcase

Monitor diode current

Dark current

TEC current

TEC voltage

Thermistor resistance

Notes :

Symb.

Iop

AVE

λm

∆λe

Tλ

bias

mod

DER

SMSR

S21

S11

∆s

Tr/Tf

∆λ/∆Tc

Conditions

CW, V

bias

= 0 V

CW, V

bias

= 0 V

, V

mod

, [1]

CW, I

, V

bias

= 0 V

See [3]

See [1]

@ I

- 3 dB

DC to 3 GHz

See [1], [2], [3]

Tsubmount=25°C,Tcase=65°C

If=100mA,Q=10log[P(65°C)/P(25°C)]

Min

Typical

Max

See table 1

- 0.1

-1

- 0.5

0.2

0.5

140

0.5

1.5

0.1

1.3

2.5

10.5

+ 0.1

Units

dBm

°C

GHz

pm/°C

µA

KΩ

See [1], [2], 10%, 90%

op,

VM = - 5 V

∆T=

45°C,I

=100mA,T

=65°C,V

bias

=-1V

∆T=

45°C,I

=100mA,T

=65°C,V

bias

=-1V

0.2

9.5

All limits start of life Tcase = 25 °C, Tsubmount = 20 °C to 30 °C, Vr = - 5 V, unless otherwise stated.

[1]BER=10

-10

;2.488Gbit/smodulation;2

-1PRBS;NZRlinecode;DER

≥

10dB

[2]7200ps/nmdispersion,assumingfiberwithanaveragedispersionof18ps/nm/km

[4]Tsubmount=Tλ.Tλischiptemperaturerequiredtomeettargetwavelength(seetable1)

[3] 12800ps/nmdispersion,assumingfiberwithanaveragedispersionof18ps/nm/km

Absolute maximum ratings

Parameters

Min

Max

Operating case temperature

Storage temperature

-40

Laser forward current

150

Laser reverse voltage

Modulator forward voltage

Modulator reverse voltage

Photodiode forward current

Photodiode reverse voltage

TEC Voltage

2.8

TEC Current

1.4

ESD applied on modulator

500

ESD applied on laser [1]

2000

Lead soldering time (at 260°C)

Packing Mounting Screw Torque

0.2

[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.

Unit

°C

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