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Datasheet> All Categories > semiconductor> Discrete semiconductor> BDW73C
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BDW73C

Description
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size214KB，2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDW73C Overview

8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB

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INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
=
6A
·High
DC Current Gain-h
FE
= 750(Min.)@ I
C
= 2A
·Complement
to Type BDW64/A/B/C/D
APPLICATIONS
·Designed
for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW63
BDW63A
V
CBO
Collector-Base
Voltage
BDW63B
VALUE
45
60
80
V
UNIT
BDW63/A/B/C/D
V
CEO
Collector-Emitter
Voltage
w
.cn
i
em
cs
.is
w
w
BDW63C
100
BDW63D
BDW63
120
45
BDW63A
BDW63B
60
80
V
BDW63C
BDW63D
100
120
5
6
0.1
2
W
60
150
-65~150
℃
℃
V
A
A
V
EBO
I
C
I
B
B
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MAX
2.08
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn

BDW73C Related Products

BDW73C BDW63D BDW63 BDW63B BDW63A BDW73 BDW73A BDW73D BDW63C BDW73B
Description 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 6 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220 6 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB 6 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB 6 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB

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