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Datasheet> All Categories > semiconductor> Discrete semiconductor> BDW74B
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BDW74B

Description
8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size212KB，2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDW74B Overview

8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB

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INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
6A
·High
DC Current Gain-h
FE
= 750(Min.)@ I
C
= -2A
·Complement
to Type BDW63/A/B/C/D
APPLICATIONS
·Designed
for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW64
BDW64A
V
CBO
Collector-Base
Voltage
BDW64B
VALUE
-45
-60
-80
V
UNIT
BDW64/A/B/C/D
V
CEO
Collector-Emitter
Voltage
w
.cn
i
em
cs
.is
w
w
BDW64C
-100
BDW64D
BDW64
-120
-45
BDW64A
BDW64B
-60
-80
V
BDW64C
BDW64D
-100
-120
-5
-6
-0.1
2
W
60
150
-65~150
℃
℃
V
A
A
V
EBO
I
C
I
B
B
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MAX
2.08
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn

BDW74B Related Products

BDW74B BDW64C BDW64A BDW64 BDW64D BDW64B BDW74 BDW74C BDW74D BDW74A
Description 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 6 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220 6 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 6 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-220AB 6 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220 6 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 8 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-220AB 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220 8 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220

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