INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDY42
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 250V(Min.)
·DC
Current Gain-
: h
FE
=20(Min.)@I
C
= 1A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 1.5V(Max)@ I
C
= 5A
·High
Switching Speed
APPLICATIONS
·Voltage
regulator
·Inverter
·Switching
mode power supply
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
400
UNIT
V
400
250
7
5
10
3
60
175
-65~175
V
V
V
A
A
A
W
℃
℃
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
P
C
T
J
T
stg
isc Website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BDY42
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 200mA; I
B
= 0
250
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1mA; I
E
= 0
400
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 2mA; I
C
= 0
7
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1.5A
B
1.5
V
V
BE
(sat)
I
CBO
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1.5A
B
2.0
0.2
2.0
20
V
Collector Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current Gain-Bandwidth Product
Switching times
t
on
Turn-on Time
w
.cn
i
em
cs
.is
w
w
V
CB
= 400V; I
E
= 0
V
CB
= 400V; I
E
= 0, T
C
=150℃
I
C
= 1A; V
CE
= 2V
I
C
= 5A; V
CE
= 2V
I
C
= 0.5A; V
CE
= 10V
I
C
= 2.5A; I
B1
= -I
B2
= 0.5A
mA
5
10
MHz
0.5
μs
t
f
Fall Time
1.0
μs
t
off
Turn-off Time
4.0
μs
isc Website：www.iscsemi.cn
2
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