INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDY72
DESCRIPTION
·Contunuous
Collector Current-I
C
= 3A
·Collector
Power Dissipation-
: P
C
= 25W @T
C
= 25℃
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 120V(Min)
APPLICATIONS
·Designed
for use in general purpose switching and linear
amplifier applications requiring high breakdown voltages.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
CEX
V
CER
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage V
BE
= -1.5V
Collector-Emitter Voltage R
BE
= 100Ω
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
w
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i
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.is
w
w
VALUE
150
UNIT
V
120
V
150
V
130
7
V
V
3
2
25
200
-65~200
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
7.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BDY72
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0
120
V
V
CER(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; R
BE
= 100Ω
130
V
V
CEX(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; V
BE
= -1.5V
150
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 0.5A; I
B
= 50mA
6.0
V
V
BE(
on
)
I
CEO
Base-Emitter On Voltage
I
C
= 0.5A; V
CE
= 4V
1.7
V
Collector Cutoff Current
I
CEX
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
f
T
Current Gain-Bandwidth Product
w
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i
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cs
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w
w
V
CE
= 140V; I
B
= 0
V
CE
= 130V; V
BE(off)
= 1.5V
V
CE
= 130V; V
BE(off)
= 1.5V, T
C
=150℃
V
EB
= 7V; I
C
= 0
I
C
= 0.5A; V
CE
= 4V
I
C
= 0.2A; V
CE
= 10V
10
1.0
5.0
1.0
mA
mA
mA
60
180
0.8
MHz
isc Website：www.iscsemi.cn
2
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