INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU105
DESCRIPTION
·High
Voltage-V
CER
= 1500V(Min.)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 5.0V(Max.)@ I
C
= 2.5A
APPLICATIONS
·Designed
for use in line operated B&W(19 and 20 inch 110
℃
deflection circuits ) or color ( 11 and 14 inch 90
℃
deflection
circuits TV receivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage R
BE
= 100Ω
Collector-Emitter Voltage
Emitter-Base Voltage
w
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i
em
cs
.is
w
w
VALUE
1500
UNIT
V
1500
750
5
V
V
V
2.5
10
115
-65~115
A
W
℃
℃
Collector Current-Continuous
Collector Power Dissipation
@T
C
= 90℃
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.5
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU105
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0
750
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100mA; I
C
= 0
5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 1.5A
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 1.5A
1.5
V
I
CES
Collector Cutoff Current
V
CE
= 1500V; V
BE
= 0
1.0
mA
C
OB
Output Capacitance
f
T
Current-Gain—Bandwidth Product
t
f
Fall Time
w
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i
em
cs
.is
w
w
I
E
= 0; V
CB
= 10V; f
test
= 0.1MHz
I
C
= 0.1A; V
CE
= 5V
I
C
= 2A; I
B1
= 1.5A; L
B
= 12μH
65
pF
7.5
MHz
0.5
μs
isc Website：www.iscsemi.cn
2
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