INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2507AX
DESCRIPTION
·High
Switching Speed
·High
Voltage
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
=0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-peak
w
.cn
i
em
cs
.is
w
w
1500
700
7.5
8
V
V
V
A
15
4
A
A
6
45
150
-65~150
A
W
℃
℃
VALUE
UNIT
I
BM
P
C
T
j
T
stg
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.8
UNIT
K/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2507AX
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA ;I
B
= 0,L= 25mH
700
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
7.5
V
V
CE
(sat)
V
BE
(sat)
I
CES
Collector-Emitter Saturation Voltage
I
C
= 4A ;I
B
= 0.8A
5.0
V
Base-Emitter Saturation Voltage
I
C
= 4A ;I
B
= 0.8A
V
CE
= BV
CES;
V
BE
= 0
V
CE
= BV
CES;
V
BE
= 0;T
C
=125℃
V
EB
= 7.5V; I
C
= 0
1.1
1.0
2.0
1.0
V
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
C
OB
Output Capacitance
Switching times
t
stg
t
f
Storage Time
w
.cn
i
em
cs
.is
w
w
I
C
= 100mA; V
CE
= 5V
I
C
= 4A; V
CE
= 5V
5
I
E
= 0; V
CB
= 10V; f
test
= 1MHz
I
C
= 4A, I
B(
end
)
= 0.7A; L
B
= 6μH;
-V
BB
= 4V
B
mA
17
7
9
68
pF
6.0
μs
μs
Fall Time
0.5
isc Website：www.iscsemi.cn
京公网安备 11010802033920号
EEWORLD
